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Showing 1 to 11 of 11 for “"Dilute nitride"”.
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Dilute Nitride Based Vertical Cavity Enhanced Photodetector
… with different material compositions of dilute nitride. The tunable selectivity is taken into account during the development in order for the VCE photodetector to be able to perform as a tunable receiver. In the first part, the performance of p-i-n photodetectors with 10 and 20 quantum …
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Novel dilute nitride semiconductor materials for mid-infrared applications
… been proposed through the development of novel dilute nitride materials. InAsN shows a large bandgap reduction with a small lattice mismatch when a small amount of nitrogen is introduced into the host InAs. Because the InAsN reported so far had generally poor crystalline quality and exhibited …
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Dilute nitride semiconductors : band structure, scattering and high field transport
… dispersion, carrier scattering and mobility of dilute nitride alloys. In the supercell model we solve the single particle Hamiltonian for a very large supercell containing randomly placed nitrogen. This model predicts a gap in the density of states of GaNxAs1−x, where this gap is filled in the …
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Comparative study of dilute nitride and bismide sub-junctions for tandem solar cells
… is incorporated into GaAs makes these alloys (dilute nitrides and bismides) possible candidates for the tandem solar cells. In this work, the performance of dilute nitride and bismide solar cells of different designs which include p-i-n bulk and p-i-n multiple quantum wells (MQWs), and n-i-p-i …
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Dilute Nitride Quantum Engineered Solar Cells: For Next Generation of Multispectral Ultra-High Efficiency Si and III-V Photovoltaics
… minority carrier transport properties of bulk dilute nitride layers is proposed. Similarly, MBE grown GaAsN/GaAs MQWs solar cell device design has been adopted to lower the thermalization loss which enables a significant sub-GaAs-bandgap photocurrent generation while maintaining a world …
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Nonlinear Dynamics of solitary and optically-injected spin vertical-cavity lasers
… stability characteristics of solitary 1300 nm dilute nitride Quantum-Well (QW) spin-VCSELs. Various forms of oscillatory behaviour causing self-sustained oscillations in the polarisation of the spin-VCSEL subject to Continuous-Wave (CW) pumping are found. Additionally, this work is extended to …
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Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure
… with the III-V-N semiconductors Gallium Nitride (GaN) and the dilute nitride Gallium Nitrogen Arsenide (GaNAs) and the effect that the band structure has on electron transport in these materials. Ensemble Monte-Carlo algorithms are developed in order to determine the electron transport …
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Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy
… of choice for communication applications. Using dilute nitride GaInAsN QWs or InAs quantum dots, emission wavelengths have successfully been extended to 1.3 m, but significant difficulties have been met going beyond 1.3 m. In this thesis, we present an alternative approach, namely, the molecular …
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Study of carrier and gain dynamics in InGaAsN quantum well lasers
… measurements. At longer time delays, the dilute nitride QW exhibits carrier localization at low temperatures and dominant nonradiative recombination at higher temperatures. This behavior contrast with that of the host matrix InGaAs in which the carrier lifetime behavior indicates radiative …
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MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths
… conventional routes relying on quantum dots or dilute nitride approaches, all with their own technical challenges and drawbacks. Metamorphic growth techniques provide compositionally graded buffer layers where the dislocations caused by strain relaxation are confined to the graded layers. …
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Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)
… are proved. Following, a study devoted to dilute nitride quantum dot nanostructures was performed. Such study began analyzing the dependence of the optical and structural characteristics of InAsN quantum dots buried with GaAs as a function of the different growth parameters. This was …