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Showing 1 to 20 of 22 for “"Die Attach"”.
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Thermal Characterization of Die-Attach Degradation in the Power MOSFET
… by the growth of voids and other defects in the die-attach layer. The goal of this dissertation is to develop measurement techniques and finite element simulations that can measure the changes in thermal performance caused by changes in die-attach voided area. These experimental results and …
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Development of Cu particle sintering as die attach solution for high temperature electronics applications
… thesis, “Development of Cu Particle Sintering as Die Attach Solution for High Temperature Electronics Applications”, submitted to TU Berlin, investigates innovative copper (Cu) sintering techniques for die-attach applications in high-temperature electronics, particularly for wide bandgap …
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Process development for high powered amplifier Au/Sn eutectic die attach via vacuum furnace
… monolithic microwave integrated circuit die attach process. Research was done to understand the causes and effects of voiding levels on device performance and reliability. Simultaneous investigation was done to qualify vacuum-attach as a successful methodology by which minimal voiding …
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Numerical simulation of interface delamination - with application to IC packaging
… that with the complete delamination of the die/die attach interface, the critically damaged region in the overmold closest to the die attach will undergo cracking, and lead to popcorn failure.
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Sintering of Micro-scale and Nanscale Silver Paste for Power Semiconductor Devices Attachment
Die attachment is one of the most important processes in the packaging of power semiconductor devices. The current die-attach materials/techniques, including conductive adhesives and reflowed solders, can not meet the advance of power conversation application. Silver paste sintering has been widely …
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A diffusion-viscous analysis and experimental verification of the drying behavior in nanosilver-enabled low-temperature joining technique
… for bonding power semiconductor chips. A common die-attach material used with LTJT is a silver paste consisting of silver powder (micron- or nano-size particles) mixed in organic solvent and binder formulation. It is believed that the drying of the paste during the bonding process plays a …
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Synthesis and Application of Ceramic Paste for High-Temperature Electronic Packaging
… enhanced and met the MIL-STD requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The die-attach material and encapsulation properties tested at 500°C showed no defect or additional cracks. Thermal …
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Thermomechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging
… focused on the development and evaluation of die-attach material and substrate technology for high-temperature applications. For the die-attach material, a low-temperature sintering technique enabled by a nanoscale silver paste was developed for attaching large-area (>100 mm2) semiconductor …
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Die-Attachment on Copper by Nanosilver Sintering: Processing, Characterization and Reliability
Die-attachment, as the first level of electronics packaging, plays a key role for the overall performance of the power electronics packages. Nanosilver sintering has becoming an emerging solder-free, environmental friendly die-attach technology. Researchers have demonstrated the feasibility of …
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Design of experiment analysis of an electronics package lid using finite element analysis
… of boundary conditions and mesh sensitivity studies.</p> <p>The results from FEA are compared to analytical calculations made using the classical laminate plate theory (CLPT) as well as the modified Suhir’s theory. It is observed that FEA results are more accurate as they account for the …
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UBM Formation on Single Die/Dice for Flip Chip Applications
… for UBM formation on aluminum pads of single die/dice for Flip Chip applications. The UBM (Under Bump Metallurgy) is required in solder bump structure to provide adhesion/diffusion barrier layer, solder wettable layer, and oxidation barrier layer between the bonding pads of the die and the …
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Sintering behavior of Ag-Sn alloys prepared via cryogenic high-energy ball milling
… there is a need to develop high temperature die-attach materials that are mechanically stable at operating temperatures of 300◦C and provide excellent thermal conductivity between die and substrate materials. There are no obvious choices for all applications, however, low temperature …
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Experimental studies of heat transport across material interfaces at the nano and micro scales
… Here we present a series of experimental studies of heat transport for two different types of material: a two dimensional (2D) material such as MoS2 and micron scale particles. We used frequency domain thermoreflectance (FDTR) to conduct all thermal property measurements. This technique can …
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Two-dimensional Mapping of Interface Thermal Resistance by Transient Thermal Impedance Measurement
… sensor was fabricated by packaging an IGBT bare die. An analytical thermal model was built to investigate the effects of thermal sensor packaging materials and structural parameters on the sensitivity of the measurement technique. Based on this model, we increased the detection sensitivity of the …
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Degradationsmodi der Oberseitenkontaktierung von SiC-Leistungshalbleitern
Diese Dissertation untersucht die Zuverlässigkeit von Aufbau- und Verbindungstechniken in Siliziumkarbid (SiC)-Leistungsmodulen, insbesondere die Oberseitenkontaktierung mit Aluminium- und Kupfer-Bonddrähten. Motiviert durch den steigenden Bedarf an robusten und leistungsfähigen SiC-Modulen für …
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High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure
… such as wire-bond interconnects and solder die-attach, flip-chip and pressure contacts. Based on the survey, a high temperature, multilayer 3-D packaging technology in the form of an Embedded Chip Module (ECM) is proposed to realize a lower stress distribution in a mechanically balanced …
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Low Pressure and Short-Time Silver-Sintering for Power Modules
Silver-sintering has become one of the main chip interconnect technologies in wide bandgap (WBG) semiconductor power modules due to its excellent thermal conductivity, high temperature stability and mechanical reliability. However, the traditional silver sintering process generally has the problems …
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Degradation modes of the top-side contacting of SiC power semiconductors
… led to the degradation of the Ag-sinter die-attach connection. Oxidation in non-encapsulated modules promoted brittle crack formation, while nitrogen-flooded modules exhibited longer lifetimes. Oxidation in non-encapsulated Cu modules caused brittle, vertical cracks in the Cu …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… beveled angle sidewall edge termination are studied at temperatures up to 600 K. As compared to the state-of-the-art SiC and GaN SBDs with a similar blocking voltage, the vertical Ga2O3 SBDs are capable of operating at higher temperatures and show a smaller leakage current increase with …
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Microstructural Evolution in Thermally Cycled Large-Area Lead and Lead-Free Solder Joints
Currently, there are two major driving forces for considering alternative materials to lead- based products, specifically interconnections, in electronics applications, including the impending legislation or regulations which may tax, restrict, or eliminate the use of lead and the trend toward …
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