Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 32 for “"Device and Circuit"”.
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Study Of Nanoscale Cmos Device And Circuit Reliability
… gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability …
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Device and Circuit Level EMI Induced Vulnerability: Modeling and Experiments
… containing semiconductor-based integrated circuits (ICs). Metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the ICs may be disrupted under EMI conditions due to transient voltage-current surges, and their internal states may change undesirably. In this work, the …
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Three-dimensional device and circuit architectures : new systems with new nanotechnologies
… product, EDP, the product of energy consumption and circuit delay) for decades. However, continued silicon scaling is becoming increasingly challenging. This is motivating the search for beyond-silicon nanotechnologies, such as one-dimensional carbon nanotubes (CNTs) or two-dimensional …
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Energy-Efficient Data-Processing Architectures - Coping with device and circuit-level nonidealities
L'abstract è presente nell'allegato / the abstract is in the attachment
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Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors
… Law. After forty years of advances in integrated circuit (IC) technology, the scaling of silicon (Si) MOSFET has entered the nanometer dimension with the introduction of 90 nm high volume manufacturing in 2004. The latest technological advancement has led to a low power, high-density and …
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Modeling and simulation of hot-carrier induced device and circuit degradation for VLSI reliability
… the hot-carrier induced degradation of MOSFET device characteristics and circuit performance. The proposed simulation tool provides information on (i) the evolution of device and circuit performance degradation during long-term dynamic operation, (ii) the amount of hot-carrier induced damage in …
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Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology
… has enabled the design of mixed-signal circuits that incorporate analog, RF, and digital circuit components to build cost-effective system-on-a-chip solutions. Emerging applications provide great incentive for continued scaling of transistor performance, requiring careful attention to …
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Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term …
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Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit
Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily …
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Effects of Hardware Design Choices on Neural Network Accuracy in Analog Inference Accelerators
Analog accelerators can enable energy-efficient and high-throughput deep neural network (DNN) computations by computing in memory. Unfortunately, device and circuit nonidealities in these accelerators, such as noise and quantization, can also lead to low DNN inference accuracy due to computation …
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An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
Intense material and device research aimed toward high-speed digital circuits and optoelectronic integrated circuits (OEICs) has focused on III-V compound semiconductors such as GaAs-based and InP-based materials because of their superior electronic properties over those of silicon. Recent advances …
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System-Technology Co-Optimization of Scaled Electronics Based on Two-Dimensional Materials
… focused on developing highly scaled electronic devices and high-density integrated circuits. However, bottlenecks have arisen recently as transistor dimensions approach the physical limits, and integration density is constrained. This thesis addresses these issues with two-dimensional (2D) …
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Design and Characterization of Fully Monolithic Millimeter -Wave Oscillators
… sets a performance benchmark for a particular device and circuit design. Empirical results in this dissertation show that the phase noise adequate for many proposed systems can be achieved with a low-cost technology such as GaAs metal-semiconductor field effect transistor (MESFET). The results …
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Carbon Nanotubes for Space Electronics: Enabling New Applications with Emerging Technologies
… on materials such as carbon nanotubes (CNTs) and transition metal dichalcogenides (TMDs). However, solely relying on new materials alone is insufficient to realize next-generation electronics. Therefore, we must coordinate advances across the entire computing stack whereby we leverage new …
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A malaria diagnostic system based on electric impedance spectroscopy
… is one of the major threats to world health and especially to the community without proper medical care. New approach to cost-efficient, portable, miniaturized diagnostic kit is needed. This work explores electric impedance spectroscopy (EIS) on a microfluidic device as a means of malaria …
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Construction of a superconducting circuit simulator and its applications in cryogenic computing
… superconducting electronics can be designed and optimized with high performance and accuracy. For this purpose, I first select numerical simulation methods that can deal with the highly non-linear characteristics of the superconducting devices. I validate the simulated responses with …
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Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors
… converter applications keep becoming faster and faster and voltage requirements become smaller and smaller, the need for new device structures becomes more prevalent. Designers of these new structures will need to make sure they take into consideration the different power losses associated …
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Analytical modeling and simulation of bicmos for VLSI circuits
… readily adopted by the VLSI community, an understanding of the design issues and tradeoffs involved when utilizing it, must be achieved. The principal focus of this research is to move towards such an understanding through the means of analytical modeling and circuit simulation using PSPICE [1]. …
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An analysis of non-utility generation alternatives
… readily adopted by the VLSI community, an understanding of the design issues and tradeoffs involved when utilizing it, must be achieved. The principal focus of this research is to move towards such an understanding through the means of analytical modeling and circuit simulation using PSPICE [1]. …
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Circuit Design And Reliability Of A Cmos Receiver
This dissertation explores CMOS RF design and reliability for portable wireless receivers. The objective behind this research is to achieve an increase in integration level, and gain more understanding for RF reliability. The fields covered include device, circuit and system. What is under …
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