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Showing 1 to 20 of 49 for “"Device Characterization"”.

  1. Thermoelectric device characterization and solar thermoelectric system modeling

    … on energy efficiency. Thermoelectric (TE) devices can be used either as heat pumps for localized environmental control or heat engines to convert heat into electricity. Thermoelectrics are appealing because they have no moving parts, are highly reliable, have high power densities, and are …

    mit Repository record for Thermoelectric device characterization and solar thermoelectric system modeling (opens in a new tab)

  2. Calibration of a microvision system for MEMS device characterization

    … developed. One microsystem in need of specific characterization measurements is the polychromator, an electrically programmable, surface micromachined diffraction grating. A microvision system has been developed to measure the electromechanical behavior of the polysilicon beams that comprise …

    mit Repository record for Calibration of a microvision system for MEMS device characterization (opens in a new tab)

  3. Generation of high amplitude, variable-width pulses for device characterization

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.

    mit Repository record for Generation of high amplitude, variable-width pulses for device characterization (opens in a new tab)

  4. Radio frequency dc-dc converters : device characterization, topology evaluation, and design

    … for the power stage was made. Appropriate devices were sought, compared, and characterized. A high frequency gate drive scheme for a large vertical MOSFET was developed. Several prototypes were built and these are also presented.

    mit Repository record for Radio frequency dc-dc converters : device characterization, topology evaluation, and design (opens in a new tab)

  5. GaN Device Characterization, Converter Optimization and Development for Enhanced Aviation Systems

    GaN device is one of the most promising candidates in high-efficiency and high-density power conversion applications. Due to the low ON-Resistance GaN devices are widely adopted in various soft-switching converters. Based on superior Baliga's Figure of Merit, GaN devices also have advantages over …

    vt Repository record for GaN Device Characterization, Converter Optimization and Development for Enhanced Aviation Systems (opens in a new tab)

  6. Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments

    … the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. …

    arkansas Repository record for Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments (opens in a new tab)

  7. Large-signal characterization and modeling of nonlinear devices using scattering parameters

    Characterization and modeling of devices at high drive levels often requires specialized equipment and measurement techniques. Many large-signal devices will never have traditional nonlinear models because model development is expensive and time-consuming. Due to the complexity of the device or the …

    vt Repository record for Large-signal characterization and modeling of nonlinear devices using scattering parameters (opens in a new tab)

  8. Material processing of quantum well infrared photodetectors

    The material and device characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, …

    uiuc Repository record for Material processing of quantum well infrared photodetectors (opens in a new tab)

  9. Fabrication and characterization of resonant cavity light-emitting transistors

    … this thesis involves the fabrication process and device characterization of the RCLETs.

    uiuc Repository record for Fabrication and characterization of resonant cavity light-emitting transistors (opens in a new tab)

  10. Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy

    … specifically involved thin film growth, film characterization, device fabrication and device characterization. To develop the SAG technique and study the effect of etchants on single crystal GaN layers during ohmic contact fabrication, surface bonding and surface morphology were examined. …

    uiuc Repository record for Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy (opens in a new tab)

  11. Charges and Excitons in Organic and Pervoskite Light Emitting Materials and Devices

    … capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. We introduced the concept of gating the compensation charge in AC-driven organic devices and demonstrated that this can result in exceptional increases in device performance. To do this we replaced the …

    wfu Repository record for Charges and Excitons in Organic and Pervoskite Light Emitting Materials and Devices (opens in a new tab)

  12. Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy

    … on the development of GaN-based power electronic devices. The hands-on research on GaN compound semiconductors includes thin film growth, material characterization, device fabrication, and device characterization using state-of-the-art semiconductor processing equipment and characterizing tools. …

    uiuc Repository record for Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy (opens in a new tab)

  13. High-speed modulation of resonant CMOS photonic modulators in deep-submicron bulk-CMOS

    … A flexible driver test circuit for in-situ device characterization has been developed with a device-to-circuit modeling framework. There are many tradeoffs that must be analyzed from the system, circuit, and device levels.

    mit Repository record for High-speed modulation of resonant CMOS photonic modulators in deep-submicron bulk-CMOS (opens in a new tab)

  14. MIT integrated microelectronics device experimentation and simulation iLab

    We developed the MIT Integrated Microelectronics Device Experimentation and Simulation iLab, a new online laboratory that combines and significantly upgrades the capabilities of two existing online microelectronics labs: WebLab, a device characterization lab, and WebLabSim, a device simulation lab. …

    mit Repository record for MIT integrated microelectronics device experimentation and simulation iLab (opens in a new tab)

  15. Design and fabrication of the microcantilever heater for rapid chemical vapor deposition graphene synthesis

    … actuated by Joule heating. The fabricated device is able to operate at the graphene synthesis temperature, ranging from 800°C to 1000°C, for longer than an hour without any degradation in functionality. To prevent electrical contact between the doped silicon device layer and the patterned …

    uiuc Repository record for Design and fabrication of the microcantilever heater for rapid chemical vapor deposition graphene synthesis (opens in a new tab)

  16. Medium voltage extreme fast charger based on novel medium voltage SiC power devices

    … each phase. Novel 7.2kV/60A SiC Austin SuperMOS devices are used as the medium voltage power electronic switches and soft-switching over the entire range of grid voltage has been ensured by a novel variable switching frequency double phase shift modulation technique. Experimental results validate …

    texas Repository record for Medium voltage extreme fast charger based on novel medium voltage SiC power devices (opens in a new tab)

  17. Hydrothermal synthesis of Al-doped ZnO nanowires and their application for photovoltaic devices

    … candidates for next-generation optoelectronic devices, including solar cells and light-emitting diodes. However, the realization of nanostructured materials for solar cell device applications is limited by the fundamental trade-off between light absorption and photocarrier collection. …

    mit Repository record for Hydrothermal synthesis of Al-doped ZnO nanowires and their application for photovoltaic devices (opens in a new tab)

  18. Low Phase Noise Oscillator Design. A Design Methodology for Improving Performance: Theoretical Analysis, CAD Simulations, and Prototype Building

    … as well as a low-noise amplifier, and individual device characterization and cancellation structures were fabricated using Fujitsu Laboratories of America 0.11-mum, 1.2-V CMOS silicon express technology. The chips were successfully tested at the Berkeley Wireless Research Center at the University …

    uiuc Repository record for Low Phase Noise Oscillator Design. A Design Methodology for Improving Performance: Theoretical Analysis, CAD Simulations, and Prototype Building (opens in a new tab)

  19. Strain-tuning of periodic optical devices : tunable gratings and photonic crystals

    The advancement of micro- and nano-scale optical devices has heralded micromirrors, semiconductor micro- and nano-lasers, and photonic crystals, among many. Broadly defined with the field of microphotonics and microelectromechanical systems, these innovations have targeted applications in …

    mit Repository record for Strain-tuning of periodic optical devices : tunable gratings and photonic crystals (opens in a new tab)

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