Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"Defect Properties"”.
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First-Principles Studies of Electronic, Optical and Defect Properties of Photovoltaic Materials
… to obtain accurate and predictable materials properties is still difficult. This is the main focus of this thesis. More specifically, we will focus on the materials selection for photovoltaics, which plays a significant role in the energy field today. While modern commercial thin-film PV …
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Optical and Spin Properties of Defect-Bound Excitons in Semiconductors
The physical properties of semiconductor defects are highly relevant for future quantum technologies and current semiconductor device performance. Optical spectroscopy is a powerful tool for investigating a wide variety of defect properties, motivating us to develop a generalized theory of …
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Positron annihilation spectroscopy to understand defect formation and evolution in neutron-irradiated Fe-Cr model alloys
… technique used to characterize the defect properties of materials. There are two major types of PAS, positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy (DBS). This work focused on the latter. DBS can be used to gain information on the various types of …
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Establishing framework of quantum Monte Carlo calculation on II-V semiconductor
Analyzing electronic properties of semiconductors in high accuracy is necessary for optoelectronic device application. First principles calculations are the best solution for evaluating the electronic properties of material, due to accurate description of quantum mechanical behavior of electrons. …
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X-ray diffraction study of the high-density phases of solid 4He
… lattice parameter measurements to study thermal defect properties. Analysis of the data indicate that the average displacement amplitudes are reduced to 10 % of the nearest -neighbour distance at 60 atoms/nm3 Related De bye temperatures are within the range of those inferred from neutron …
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Compositional modifications in alloys under irradiation
… the depth of origin of sputtered atoms and the defect properties in Ag-Au-Cu alloy system was derived. Radiation-induced precipitation during ion sputtering was investigated using the same kinetics model as applied for binary alloys. Special space transformations were applied to accommodate for …
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DEFECTS AND LIFETIME PREDICTION OF GERMANIUM MOSFETS
… for Si is inapplicable to Ge devicesand defect properties in Ge and Si MOSFETs are different.The threshold voltage degradation in Ge can be nearly 100% recovered under a much lower temperature than that in Si devices. The defect losses observed in Si devices were absent in Ge/GeO2/Al2O3. …