Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 2 of 2 for “"Decaborane Ions"”.
-
Effects of implementation of decaborane ions in silicon
The next generations of Si microelectronic devices will require ultra shallow p-type junctions formed by implantation of B ions with energies below 1 keV, at which available beam currents are severely limited by space charge effects. To solve this problem, decaborane (B_{10}H_{14}) cluster ion …
-
Low energy implantation of boron with decaborane ions
… approach to forming ultra shallow p-type junctions (tens of nm.) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B_{10}H_{14})vapor. Each B atom carries only ~9% of the cluster kinetic …