Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 43 for “"DLTS"”.
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DLTS characterization of aluminum gettering of iron contaminants in boron-doped silicon
Thesis (B.S.)--Massachusetts Institute of Technology, Dept. of Physics, 1996.
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Dislocation related defects in silicon and gallium nitride.
… (GaN) using deep level transient spectroscopy (DLTS) and Laplace DLTS (LDLTS).Laplace DLTS is a powerful tool in characterising point defect related emission, but until now it has not been used extensively for investigating emission from extended defects. Using LDLTS, broad DLTS peaks arising …
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A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)
A detailed analysis of the measurement technique known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation …
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Deep-Level Transient Spectroscopy Studies of Gallium Arsenide - Aluminum Gallium Arsenide Heterostructures and Superlattices
… of using deep-level transient spectroscopy (DLTS) to measure conduction band-edge discontinuities in GaAs - AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS.
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Simulating Internet of Things Mobile Ad-Hoc Networks with Distributed Ledger Technology: "Which DLT is Best?"
… (IoT) and Distributed Ledger Technologies (DLTs), are both young fields that are especially suited to covering low-power decentralized environments. We identify an under-studied niche of IoT Mobile Ad-hoc NETworks (MANETs) to best utilize DLTs, and challenge ourselves to put an entire …
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Defektspektroskopie an Solarzellen und Schottky-Kontakten auf Basis des Halbleiters Cu(In,Ga)Se 2
… von CIGS mit Hilfe von Admittanzspektroskopie, DLTS und Quantenausbeute untersucht. Zusätzlich werden Simulationsrechnungen (mit SCAPS-1D) vorgenommen. Es wird gezeigt, daß mit Hilfe der Admittanzspektroskopie eine Qualitätskontrolle der Solarzellen möglich ist. Durch differenzierte …
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Electrically active defects in novel Group IV semiconductors.
… diodes. Deep level transient spectroscopy (DLTS) and Laplace DLTS were then carried out to investigate the deep electronic states in these devices. Scanning Electron Microscopy (SEM) was also used to investigate defects in the diamond samples. For the diamond Schottky diodes, I-V and C-V …
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Electrical analysis of low energy argon ion bombarded GaAs
… included Deep Level Transient Spectroscopy (DLTS), Current-Voltage (I-V), Capacitance-Voltage (C-V), ConductanceVoltage (G-V), Capacitance-Temperature (C-T), and Activation Energy Analysis. These electrical measurements were carried out on GaAs which had been exposed to a variety of …
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Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy
… analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deep levels in the GaAs-GaP system.
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Electrical characterisation of defects in wide bandgap semiconductors.
… (TAS), deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS measurements. This dissertation presents the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal …
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Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature
… (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were …
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Electrical studies of silicon and low K dielectric material
… junction. Deep level transient spectroscopy (DLTS) as one of the most sensitive electrical measurement techniques can detect electrically active impurity concentration on the level of 10-1 to 10-5 of substrate doping concentration. The characteristic energy level and capture cross-section of …
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Capacitance spectroscopy on copper indium diselenide based solar cells
… level transient and admittance spectroscopy (DLTS and AS). For the solar cells with mixed absorber composition (0 < GGI<1) in principle the same defect spectra were found. So the bulk defects are not responsible for the 'break down' in open circuit voltage. Furthermore, for the defect signal …
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Essays in financial economics
… theories, where discretionary liquidity traders (DLTs) decrease volume when they know there is much adverse selection. However, DLTs do not seem to read information embedded in prices before unscheduled announcements. I further investigate the behavior of market makers and find that they act …
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Study of Deep Levels in (100) and (311)B Molecular Beam Epitaxial Gallium-Arsenide by Constant-Capacitance Deep Level Transient Spectroscopy
… deep level transient spectroscopy (CC-DLTS) has been divided into three parts. First, the deep level centers unique to MBE GaAs layers were identified; second, the effect of growth and annealing conditions on trap concentrations were determined; and finally, that information was applied …
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Effects of ion processing and substrate variables on electrical characteristics of GaAs
… Transport and deep level transient spectroscopy (DLTS) results are presented for 50 keV Si-implanted and RTA (rapid thermal annealing) GaAs with (100) and (211) substrate orientations. Several electron traps are identified and their possible origins discussed. It is observed that (211) GaAs, after …
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Defect reactions and impurity control in silicon
… reactions. Deep level transient spectroscopy (DLTS) has been used to identify specific defects and to measure defect concentrations. The experimental results can be summarized in terms of a complex hierarchy diagram of defect reactions. We describe the defect reactions as a three-step process: …
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Effects of ion irradiation on 4H- SiC p-n junction
… while Deep Level Transient Spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device's electrical performances are observed after irradiation and two fluence regimes are identified. In the low fluence range (≤ 10^13 cm^-2), the I-V …
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Electrical study of molybdenum in silicon and fluorinated SiO₂ for interlayer dielectrics
… minority carrier lifetime. In this project, DLTS was used to measure the concentration of electrically active molybdenum. Temperature dependence was investigated by varying annealing temperature and keeping annealing time constant, and time dependence was studied by performing rapid thermal …
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