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Showing 1 to 4 of 4 for “"DLOS"”.

  1. Planning for manipulation of interlinked deformable linear objects with applications to aircraft assembly

    … formulation for attaching a set of interlinked DLOs to a support structure using a set of clamping points. The formulation describes the manipulation planning problem in terms of known clamping locations; pre-determined ideal clamping locations on the cables, called "reference points", and a set …

    mit Repository record for Planning for manipulation of interlinked deformable linear objects with applications to aircraft assembly (opens in a new tab)

  2. Interface Trap Characterization of ALD-grown Al<sub>2</sub>O<sub>3</sub>/GaN MIS Capacitors

    … capacitance deep level optical spectroscopy (CC-DLOS), making it possible to probe the interface over the entire GaN bandgap. To investigate the role of Al<sub>2</sub>O<sub>3</sub> thickness on interface state densities and explore the presence of Al<sub>2</sub>O<sub>3</sub> bulk traps, 6.8, …

    ohiolink Repository record for Interface Trap Characterization of ALD-grown Al<sub>2</sub>O<sub>3</sub>/GaN MIS Capacitors (opens in a new tab)

  3. Parametric Modeling of Deformable Linear Objects for Robotic Outfitting and Maintenance of Space Systems

    … under the domain of Deformable Linear Objects (DLOs), have not received such attention despite being critical components of powered space systems. Cables often have a non-zero bend equilibrium configuration, which the majority of DLO research does not consider. This dissertation implements a …

    vt Repository record for Parametric Modeling of Deformable Linear Objects for Robotic Outfitting and Maintenance of Space Systems (opens in a new tab)

  4. Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes

    … (DLTS) and deep level optical spectroscopy (DLOS) [Section 3.3 and 3.4]. It is shown that simply increasing TMGa so that high growth rates (>4 µm/hr) can be achieved will cause the free carrier concentration and the electron mobilities in grown drift layers to decrease. Upon examination of …

    vt Repository record for Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes (opens in a new tab)