Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 8 of 8 for “"DIBL"”.
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A study of silicon and germanium junctionless transistors
… current ratio of 1.2×103 at VD = -1 V and DIBL of 87 mV/V.
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Array-based planar nanowire high electron mobility transistor
… performances: I_on/I_off ~104, SS ~102 mV/dec, DIBL ~151 mV/V and f_T/f_max ~33/75 GHz. To our knowledge, the DC/RF performances achieved here are the best among the nanoscale devices with VLS NWs, carbon nanotubes, or 2D sheets aligned in-plane with the substrate.
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InGaAs self-aligned HEMT for logic applications
… a VT of 60 mV, g, of 1.3 S/mm, SS of 71 mV/dec, DIBL of 55 mV/V and an I,/Ileak ratio of 2x103.
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Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications
… slope (SS) and drain induced barrier lowering (DIBL). The Tri-gate configuration provides a steeper SS effectively reducing leakage current (IOFF), thereby decreasing dynamic power consumption and increasing device performance. Recently, Tantalum silicate (TaSiOx) a high-k dielectric has been …
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ASIC Implementation Methodology and Design Challenges in 16nm
… behavior, drain-induced barrier lowering (DIBL), subthreshold swing, leakage current, drive current, temperature dependence, and capacitance characteristics for both standard-threshold and low-threshold device variants. The analysis demonstrates the tradeoffs between performance and leakage …
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Ultra Low Power SubThreshold Device Design Using New Ion Implantation Profile
… channel to eliminate many unwanted effects like DIBL, short channel effect, threshold variation etc. These effects are always become a serious issue whenever circuit operates at higher supply voltage. Subthreshold circuit operates at lower supply voltage and these kind of effects will not be a …
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Modeling and simulation of nano-scale transistor
… effects such as drain induced barrier lowering (DIBL) has also been a challenge for every iteration of technology node. ☐ Compared with MOSFETs, TFET is widely viewed as the promising candidates for future low-power logic/analog application Because of its steep subthreshold slope, better …
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Physical Modeling of Graphene Nanoribbon Field Effect Transistor Using Non-Equilibrium Green Function Approach for Integrated Circuit Design
The driving engine for the exponential growth of digital information processing systems is scaling down the transistor dimensions. For decades, this has enhanced the device performance and density. However, the International Technology Roadmap for Semiconductors (ITRS) states the end of Moore’s law …