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Showing 1 to 20 of 25 for “"Czochralski"”.
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Analysis of heat transfer, stability, and dynamics of Czochralski and liquid encapsulated Czochralski growth of semiconductor materials
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1986.
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Identification of Crystal Growth dynamics in Czochralski Systems
… relating crystal radius to power changes in a Czochralski crystal growth system, The experimental method employs pseudo-random signal injection into the power controller of a gallium phosphide crystal puller and uses crystal radius measurements made on the cold crystal after growth is complete. …
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Mathematical modelling of the Czochralski crystal growth process
In this document a mathematical model for the Czochralski crystal growth process is developed. The trend in current research involves developing cumbersome numerical simulations that provide little or no understanding of the underlying physics. We attempt to review previous research methods, mainly …
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Quantitative modelling for optimization of the Czochralski growth of silicon
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1992.
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Melt flow in a Czochralski crystal puller with a transverse magnetic field
… application of a transverse magnetic field to a Czochralski crystal puller improves the quality of the resulting crystals. The melt flow is difficult to model; it is nonlinear and three-dimensional with additional complexity generated by the magnetic field. Two methods are shown by which the …
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Studies of point defect control in liquid-encapsulated czochralski growth of GaAs
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1987.
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Influence of bulk defects in p-type Czochralski silicon on reliability of high efficiency solar cells
… be suppressed with slower pulling rates of the Czochralski Si and/or an optimized contact firing process. We extend our work to solar cells to replicate our results in Chapters 2-5.
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Surface-interface states and the Hall effect measurement of epitaxial and semi-insulating liquid-encapsulated Czochralski gallium arsenide
"The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to …
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The effect of growth parameters on impurity segregation and crystal quality of Liquid Encapsulated Czochralski grown Indium Phosphide
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1984.
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Optimization of silicon sheet growth and liquid encapsulated Czochralski growth of gallium arsenide by thermal-capillary modeling and stress analysis
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1989.
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Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells
… other main substrate used is single crystalline Czochralski wafers (~30% of the market share). Czochralski silicon material is known to suffer from the formation of a metastable defect under carrier injection, sometimes referred to as light induced degradation (LID). Light induced degradation in …
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Modeling the linkages between heat transfer and microdefect formation in crystal growth : examples of Czochralski growth of silicon and vertical Bridgman growth of bismuth germanate
… industrially important crystal growth problems: Czochralski (CZ) growth of single-crystal silicon and growth of bismuth germanium oxide (Bi4Ge30 12:BGO) by the vertical Bridgman method. A sequential, two-step approach is taken for linking mathematical modeling between processing conditions and …
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Investigations into b-o defect formation-dissociation in cz-silicon and their effect on solar cell performance
… solar cells is taken by single crystalline Czochralski (CZ) grown wafers. The efficiency of solar cells fabricated on boron-doped Czochralski silicon degrades due to the formation of metastable defects when excess electrons are created by illumination or minority carrier injection during …
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Numerik für die Marangoni-Konvektion beim Floating-Zone Verfahren
… gehalten wird, <br>ist neben dem Czochralski-Verfahren das einzige Silicium-Züchtungsverfahren <br>von wirtschaftlicher Bedeutung. Gradienten der Dichte (Auftriebskonvektion) <br>und der Oberflächenspannung (Marangonikonvektion) bewirken eine i.a. <br>dreidimensionale Strömung in …
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Anisotropy and magnetostriction of GdA12 and related compounds
… R' are rare-earth metals, have been grown by the Czochralski technique. Measurements of the magnetostrictions and anisotropies of disc-shaped samples of the compounds GdAl2, Gd0.98 Tbg0.02 and Gdg0.95Tbg0.95 Al2 have been made between 4.2K and their Curie temperatures in applied magnetic fields up …
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Modeling microdefects formation in crystalline silicon : the roles of point defects and oxygen
… substrates that are grown from the melt by the Czochralski crystal growth method. There is an ever increasing demand for control of size and density of microdefects in the silicon for control of quality and uniformity of the fabricated microelectronic devices. This thesis is aimed at developing …
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The inclusivity of ice.
… examined through the utilization of a modified-Czochralski freezing method with inorganic salts, such as sodium chloride, ammonium chloride, and ammonium sulfate; organic salts, such as sodium acetate, sodium formate, and ammonium acetate; as well as the volatile molecule, tetrahydrofuran. In …
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Modeling the effect of boron on microdefect formation
… formation in silicon crystal growth by the Czochralski crystal growth method. Microdefect patterns in the crystal are known to be associated with the native point defects, namely self interstitials and vacancies. The focus of this thesis is the analysis of the Oxidation Induced Stacking …
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Phase field model for precipitates in crystals
… is the most common and important defects in Czochralski (CZ) silicon. The presence of oxygen precipitate in silicon wafer has both harmful and beneficial effects on the microelectronic device production. Oxygen precipitates are useful for gathering metallic contaminants away from the device …
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Advanced Characterization of Defects in Silicon Wafers and Solar Cells
… traps and majority carrier traps in n-type Czochralski are investigated using photoconductance measurements. At the end of this thesis, a new approach of photoluminescence imaging using non-uniform illumination is developed in order to achieve accurate quantitative charge carrier lifetime …
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