Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 14 of 14 for “"Current saturation"”.
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Experiments and Theory on the Characteristics of Metal-Oxide - Semiconductor Transistors in the Current Saturation Range
Made available in DSpace on 2014-12-08T22:24:30Z (GMT). No. of bitstreams: 1 6910660.pdf: 2926652 bytes, checksum: 88ff04c80f48f2006749eedcd6203e8f (MD5) Previous issue date: 1968
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Theoretical and Experimental Studies of Current Saturation Phenomena and Low Frequency Generation-Recombination Noise in Junction-Gate Field-Effect Transistors
Made available in DSpace on 2014-12-08T22:24:01Z (GMT). No. of bitstreams: 1 6612461.pdf: 2888768 bytes, checksum: 82d5f60dc1e03c6694c99262e14a3959 (MD5) Previous issue date: 1966
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Design and fabrication of Emitter Controlled Thyristor
… the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. An ECT is composed of an emitter switch in series with the thyristor, an emitter-short switch in parallel with the emitter junction of the thyristor, a turn-on FET and …
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Design and Fabrication of the Emitter Controlled Thyristor
… the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. An ECT is composed of an emitter switch in series with the thyristor, an emitter-short switch in parallel with the emitter junction of the thyristor, a turn-on FET and …
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Field emission from silicon
… observation until now. Experimental evidence of current saturation in field emission existed in the literature. We also report the observation of current saturation in n-type silicon field emitter arrays. A simple model is presented to account for the results. We report successfully fabricating …
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Investigation of MOS-Gated Thyristors and Power Diodes
… the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. The MOS-controlled thyristor (MCT) is a typical MGT device. A comprehensive investigation of the reverse-biased safe operating area (RBSOA) characteristics of the MCT …
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semiconducting carbon nanotube transistors: electron and spin transport properties
… order to explore the transport of spin-polarized current through the SWNT. In some cases spin-dependent transport was observed, verifying long spin scattering lengths in SWNT. However, in many cases no spin-dependent effects were observed; these results will be discussed in the context of the …
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Characterization of Graphene Field-Effect Transistors for High Performance Electronics
… of graphene FETs are investigated. Current saturation as well as the effect of ambipolar conduction on the current-voltage characteristics are studied. A field-effect model is developed that can capture the effects of the unique band structure, such as a density-dependent saturation …
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Feature scaling of large, ballasted, field emission arrays
… electron transport, and their potential for high current density and high current, especially when they are used in an array format. However, a major challenge preventing the widespread use of this technology are the spatial and temporal variations that arise from non-uniformity in emitter tip …
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The Clustered Insulated Gate Bipolar Transistor (CIGBT) — from concept to manufacturing
… high anode voltages, which results in excellent current saturation and efficient switching performance. Principals of the device operation and the internal mechanisms at different operation conditions have been analysed using numerical modeUing. It is shown that a superior trade off between the …
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Substrate-dependent high-field transport and self-heating in graphene transistors
… sinking effects. Self-heating in GFETs causes current degradation (up to ~10-20%) in micron-sized devices on SiO2/Si but is reduced if the supporting insulator thickness is scaled down. The transient behavior of such FETs has thermal time constants in the range of 50-250 ns, dominated by the …
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Novel Power Semiconductor Devices and Technologies
… The 1200V devices show a hot/cold leakage current and forward voltage drop of 518pA/L42|iA and 3.19V/2.99V at 400K and room temperature respectively whereas the 1700V devices show a hot/cold leakage current and forward voltage drop of 1.58mA/2.95|.iA and 3.01 V/2.82V respectively. In terms …
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Design and operation of Low Frequency AC (LFAC) transmission system for connecting offshore wind farms
… factors and the abundant offshore space. Currently, the High Voltage AC (HVAC) and High Voltage DC (HVDC) transmission systems (TS) are the commercial options for integrating the wind power to the onshore grid. The technical and economic efficiency of each approach is evaluated on a …
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Laser beam induced current studies of Hg1-xCdxTe photodiodes
Laser-beam-induced-current (LBIC) is being investigated as a combined electro-optical (EO) alternative to individual electrical and optical based measurements of p-n junction photodiodes. The technique is non-destructive and employs a focused low-power laser beam that is scanned across the …