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Showing 1 to 6 of 6 for “"Cu2ZnSn"”.

  1. Cu2ZnSn(S,Se)4 photovoltaic absorber fabrication by hydride chalcogenization of electrodeposited precursors

    Cu2ZnSn(S,Se)4 (CZTSSe) is a semiconducting material with potential application as the absorber layer in thin-film photovoltaic (PV) devices. Closely related to the commercially available Cu(In,Ga)Se2 (CIGS) absorber material, CZTSSe consists of more readily-available materials, and may therefore …

    udel Repository record for Cu2ZnSn(S,Se)4 photovoltaic absorber fabrication by hydride chalcogenization of electrodeposited precursors (opens in a new tab)

  2. Solution Routes to Metal Chalcogenide and Zinc Oxide Thin Films for Device Applications

    … copper zinc tin sulfide/selenide/sulfoselenide (Cu2ZnSn(S1-x Sex)4 (0≤x≤1) (CZTSSe) and zinc oxides (ZnO). The corresponding thin film devices based on the solution routes are also presented.

    purdue-thes Repository record for Solution Routes to Metal Chalcogenide and Zinc Oxide Thin Films for Device Applications (opens in a new tab)

  3. Nanocrystal Synthesis and Thin Film Formation for Earth Abundant Photovoltaics

    … global demand for electricity. Solar cells with Cu2ZnSn(S,Se)¬4¬ (CZTSSe) absorber layers are of particular interest due to the high absorption coefficient of CZTSSe, its band gap in the ideal range for efficient photovoltaic power conversion, and the relative abundance of its constituent …

    purdue-thes Repository record for Nanocrystal Synthesis and Thin Film Formation for Earth Abundant Photovoltaics (opens in a new tab)

  4. Elektrochemische Legierungsabscheidung zur Herstellung von Cu2ZnSnS4 Dünnschichtsolarzellen

    … geeigneten Verbindungshalbleiter Cu2ZnSnS4 (CZTS) und Cu2ZnSnS(4-x)Sex (x<3, CZTSSe) konnten erfolgreich durch Kombination der elektrochemischen Legierungsabscheidung und der anschließenden Sulfurisierung in H2S-haltiger Atmosphäre hergestellt werden. In früheren Arbeiten wurden …

    qucosa-diss

  5. First-Principles Studies of Electronic, Optical and Defect Properties of Photovoltaic Materials

    … recent alternative candidate based on kesterite Cu2ZnSn(S,Se)4 (CZTS) peaked at relatively low efficiencies (12.6%) due to the limited open circuit voltage (Voc) caused by the prevalent anti-site structure disorder (e.g. Cu on Zn, Zn on Cu). A possible path forward to reduce this antisite …

    duke Repository record for First-Principles Studies of Electronic, Optical and Defect Properties of Photovoltaic Materials (opens in a new tab)

  6. Solution-Processed Thin Film Deposition and Characterization of Multinary Chalcogenides: Towards Highly Efficient Cu2BaSn(S,Se)4 Solar Devices

    … CdTe and Cu(In,Ga)(S,Se)2. Kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) materials have emerged as alternatives to address these issues for environmentally benign, low-cost photovoltaic (PV) and photoelectrochemical (PEC) applications. However, the significant degree of detrimental defect …

    duke Repository record for Solution-Processed Thin Film Deposition and Characterization of Multinary Chalcogenides: Towards Highly Efficient Cu2BaSn(S,Se)4 Solar Devices (opens in a new tab)