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Showing 1 to 2 of 2 for “"Cu(hfac)2"”.
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Chemical vapor deposition of thin films for ULSI interconnect metallization
… metallization using solution delivery of Cu(hfac)2 (Cu(II) hexafluoroacetyl-acetonate) dissolved in isopropanol. We observe a growth rate of 17.7 „b 1.5 nm/min at reference conditions of 300„aC substrate temperature, 0.025 Torr Cu(hfac)2 partial pressure, 1.6 Torr isopropanol (reducing …
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Co-reactant interactions with CVD surfaces: Activation or passivation of growth
… vapor deposition. Ammonia emerges as a particularly important additive because of: (i) the ability of catalytically active surfaces to dissociate NH3, which supplies H and N atoms to the growth reaction; (ii) the requirement for NHx species to drive precursor transamination pathways; and …