Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 15 of 15 for “"Coulomb scattering"”.
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Coulomb scattering in a magnetic field.
Massachusetts Institute of Technology. Dept. of Geology and Geophysics. Thesis. 1966. Ph.D.
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Characterization and Modeling of Low Frequency Noise and Dielectric Traps in Scaled MOSFET Devices
… the ``unified'' noise model and includes remote Coulomb scattering and surface roughness - the latter is a new consideration in the theory. Our experimental work focuses on scaled NMOS devices with a composite dielectric consisting of a 0.5 nm SiO<sub>2</sub> covered with a high-K, 1.6 nm …
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Ion Cyclotron Resonance Heating Induced Transport in Stellarators and Other Asymmetric Toroids
… changes in an ion's magnetic moment on a Coulomb scattering model that contains the Spitzer coefficients of drag, velocity diffusion, and pitch angle scattering (PAS). Ion drift orbit equations of motion are set in a magnetic flux coordinate system which separate fast motion along the …
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Analysis of coulomb interaction using modified particle-particle-particle-mesh method in Monte Carlo simulation
… Carlo (EMC) simulator, MOCA3D, to treat the Coulomb scattering, i.e. carrier-carrier and carrier-impurity scattering. We show that most of the problems in the particle{mesh (PM) based scattering rate approach are solved by the P3M method. The properties of the Coulomb scattering are analyzed …
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Laser cooling of fast stored ion beams to extreme phase-space densities
… potentials and the important role of intra beam Coulomb scattering have been investigated on the basis of systematic measurements and realistic computer models. At extreme phase-space densities an abrupt disappearance of intra beam scattering is observed which could possibly indicate the onset of …
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Lattice mismatched compound semiconductors and devices on silicon
… studied by Hall measurements and the dominant scattering mechanisms were discussed. Although invariant for different gate dielectric (Al203) thicknesses, the mobility turns out to be strongly dependent on the barrier thickness, gate dielectric/barrier interfacial defect states and carrier …
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NANOSCALE EFFECTS IN JUNCTIONLESS FIELD EFFECT TRANSISTORS
… limit. To study the RDF effects and treat full Coulomb (electron-ion and electron-electron) interactions in the real-space and beyond the Poisson picture, the simulator implements a corrected-Coulomb electron dynamics (QC-ED) approach. The essential bandstructure and scattering parameters …
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A Study of Fusion Product Effects in Field-Reversed Mirrors
… fluid. MCFRM includes a Monte Carlo treatment of Coulomb scattering and thus provides an accurate treatment of fp behavior even at lower energies where pitch-angle scattering becomes important. The second code (FRMOD) is a steady-state, globally averaged, two-fluid (ion and electron), point model …
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On a Renormalized QCD-inspired Model in the Light-cone Formulation
… this region the potential is showing a universal Coulomb behaviour. Using this arbitrariness at small distances, by requiring it for example to start off as a pure harmonic oscillator potential, it inevitably forms a barrier in the scattering region in order to catch up with the asymptotic Coulomb …
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Investigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs
… Increased channel doping will increase Coulomb scattering interactions increasing its influence on the overall mobility. Electron transport models were calibrated using experimental data for both strained and un-strained Si devices for various channel doping concentrations. The transport …
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Radiation-induced mobility degradation in DMOS transistors.
… Interface-trapped charge is more effective in scattering inversion-layer carriers than oxide-trapped charge. However, the effects of oxide-trapped charge must be taken into account in order to properly describe the mobility behavior. An effective approach to detecting effects of oxide-trapped …
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Scattering in Nano-Electronic Devices
… Phonon-electron interaction- the most dominant scattering mechanism at room and higher temperatures is also studied. It is concluded that the well known trend for phonon limited mobility, observed in measurements, is not observed in the range where surface roughness scattering is negligible, …
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Electronic Transport in Highly Mismatched InAs Films on GaAs
… lead to lower electron mobilities due to more Coulomb scatterings. For all the n-type InAs films, except the two active layers (surface and the bulk), the nucleation layer contributes to the film conductivity as well with an electron density of ~ 5 x 10¹⁷ cm⁻³ and a mobility of ~ 2000 cm²}/Vs. …
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Toward the end of the MOSFET roadmap : investigating fundamental transport limits and device architecture alternatives
… be indicative of a transition in the dominant scattering mechanism, from surface- to Coulomb- scattering. The relevance of low-field mobility to the performance of deep-sub-100-nm MOSFETs is not well understood. In this work this relationship is studied experimentally: mobility (with low …
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Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
… MOSFETs. These include effect of charge scattering centres on the dielectric/Si interface as well as substrate ionized impurities. Also contributing to mobility reduction is phonon scattering, that is, vibration of lattice bonds. In this thesis, samples of high-κ based MOSFETs and MOS …