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Showing 1 to 13 of 13 for “"Copper films"”.

  1. Instrumentation For the Study of Tantalum Diffusion Barriers Between Silicon Substrates and Copper Films

    … for future reduction of silicon devices. Copper is better suited for sub-micron sized interconnects because of its lower electromigration and lower electrical resistance as compared to aluminum. However, copper has a tendency to readily diffuse into silicon; therefore, a diffusion barrier …

    mo-state Repository record for Instrumentation For the Study of Tantalum Diffusion Barriers Between Silicon Substrates and Copper Films (opens in a new tab)

  2. Spontaneous metal deposition from organic solutions for electronic materials applications

    … unpatterned pure aluminum and Al(0.5wt%Cu) thin films using this immersion displacement process. The Cu and Pd deposits were effectively used as catalytic sites for subsequent conventional electroless or electrolytic copper deposition.</p> <p>Further studies were performed to modify and optimize …

    must-thes Repository record for Spontaneous metal deposition from organic solutions for electronic materials applications (opens in a new tab)

  3. Precursors for copper chemical vapor deposition

    … precursors that are capable of producing copper films of high quality by chemical vapor deposition (CVD). We investigated some copper(I) and copper(II) complexes as precursors for chemical or photochemical vapor deposition. In chapter 2, we synthesized a series of …

    lsu-thes Repository record for Precursors for copper chemical vapor deposition (opens in a new tab)

  4. Study of thin metal films and oxide materials for nanoelectronics applications

    Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide flakes. The crystallization and surface …

    cambridge Repository record for Study of thin metal films and oxide materials for nanoelectronics applications (opens in a new tab)

  5. Changes of some optical constants of thin metallic films due to exposure to gases

    … absorptivity of freshly evaporated silver and copper films were measured in vacuo and then in the presence of several gases. These measurements were performed, using the photoelectric method, with two photomultiplier tubes (931-A and 1P21), and were made at an angle of incidence of zero degrees …

    vt Repository record for Changes of some optical constants of thin metallic films due to exposure to gases (opens in a new tab)

  6. New precursors and chemistry for the growth of transition metal films by atomic layer deposition

    … for ALD.</p> <p> Nickel nitride (NixN) films have been studied as an intermediate material for the formation of both nickel metal and nickel silicide using chemical vapor deposition. Herein, we describe the ALD growth of nickel nitride thin films from …

    wayne-thes Repository record for New precursors and chemistry for the growth of transition metal films by atomic layer deposition (opens in a new tab)

  7. Planar metallization failure modes in integrated power electtonics modules

    … thin film structures. The thickness of the thin films used in integrated circuits (IC) or microelectronics applications ranges from the magnitude of nanometers to that of micrometers. In this work, we are interested in adopting planar interconnections to Integrated Power Electronics Modules …

    vt Repository record for Planar metallization failure modes in integrated power electtonics modules (opens in a new tab)

  8. An experimental and finite element investigation of thermally induced inelastic deformation of single-level damascene copper high density interconnect structures

    … induced deformation mechanisms in the areas of copper and polyimide vias in copper-polyimide interconnect structure, as a result of a thermal cycle to 350&deg;C. The copper films exhibited evidence of copper grain boundary sliding, Coble creep, and voids formation. Cu-Ta interfacial sliding was …

    unh-thes Repository record for An experimental and finite element investigation of thermally induced inelastic deformation of single-level damascene copper high density interconnect structures (opens in a new tab)

  9. Nano-cellular microstructure evolution in ion-induced chemical vapor deposition (II-CVD) of copper

    … chemical vapor deposition (11-CVD) of copper from copper(I)hexafluoroacetylacetonatevinyltrimethylsilane (Cu(I)hfacVTMS) gas precursor is reported. II-CVD involves the ion-driven decomposition of Cu(l)hfacVTMS and subsequent deposition of copper films at ambient temperature. The thin …

    mit Repository record for Nano-cellular microstructure evolution in ion-induced chemical vapor deposition (II-CVD) of copper (opens in a new tab)

  10. Stability, structure, and barrier properties of self-assembled films on metal supports

    … of n-alkanethiols [CH 3(CH2).-ISH] onto copper to protect the underlying metal from corrosion. Due to their dense packing and crystalline structure, these films provide a barrier that impedes the transport of oxygen and water to the copper surface. As measured by electrochemical impedance …

    mit Repository record for Stability, structure, and barrier properties of self-assembled films on metal supports (opens in a new tab)

  11. Pulsed-Laser-Induced Melting and Solidification of Thin Metallic Films

    … melting and solidification of thin metallic films on SiO2. Two distinct topics were pursued: (1) microstructural manipulation and optimization of Cu films via SLS of as-deposited Cu films on SiO2, and (2) investigation of oriented heterogeneous nucleation via complete melting and subsequent …

    columbia-diss Repository record for Pulsed-Laser-Induced Melting and Solidification of Thin Metallic Films (opens in a new tab)