Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"Constant voltage stress"”.
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GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS
… of ultrathin dielectric gate breakdown during constant voltage stress. It is verified that the dielectric breakdown induce epitaxy (DBIE) plays an important role in the device electrical behavior after breakdown. Our model is helpful in the study of the breakdown types under different stress …
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The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric
… of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the …
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GATE DIELECTRIC BREAKDOWN PHYSICAL ANALYSIS AND STUDIES -2D MODELING OF BREAKDOWN THERMAL EFFECT
… breakdown of ultra-thin silicon dioxide under constant voltage stress conditions. Therefore, to assure the reliability demands, the physics of the dielectric breakdown-induced epitaxy (DBIE) phenomenon must be fully understood. In this project, a theoretical model has been built based on the …
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
… gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to overcome these challenges, improvements of the high-x film properties and deposition methods are highly desirable. In this dissertation, a detail study of Zr and Al …
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Influence of SiNx/Si interface states on Si solar cells
… MOS capacitor when it was subjected to a constant voltage stress (CVS) of +10V at room temperature. The interface trap density (D_{it}) across the SiN:H/n^+-Si interface increased from 6.3 x 10^9 to 7.5 x 10^9 cm^{-2} eV^{-1} after a 500-second stress whereas the n^+/p junction diode …
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On variability and reliability of poly-Si thin-film transistors
… characterize the GB-induced transistor threshold voltage <em>(V<sub> th</sub>)</em>variations considering not only the number but also the position and orientation of each GB in 3-D space. The fast computation time of the proposed model makes it suitable for evaluation of GB-induced transistor …
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HfO2 as gate dielectric on Si and Ge substrate
… device size because of its high dielectric constant. HfO_2 films are currently deposited by various techniques. Many of them require high temperature annealing that can impact device performance and reliability. In this research, electrical characteristics of capacitors with HfO_2 as gate …
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Development of electrical characterization techniques for lifetime prediction and understanding defects in InGaAs-based III-V transistors
… multiple pulse (DMP) method, and hot carrier stress. Those are also topics and directions relate tod this thesis for the further research. Chapter 2 shows a new measurement method, which called Fast reliability screening technique method (VSS). It compared the conventional measurement method, …
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TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
… of breakdown process can be studied through stress induced leakage current (SILC); (iii) relationship of various degradation mechanisms such as negative bias temperature instability (NBTI) with that of the dielectric breakdown; and (iv) a fast evaluation process to estimate statistical …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… which is limited by trapping at pre-existing and stress induced defects, remains to be a major concern. Energy levels of electrically active ionic defects within the thick high-[Kappa] have been experimentally observed in the context of MOS band diagram for the first time in Hf-silicate gate …