Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 14 of 14 for “"Compound semiconductor materials"”.
-
Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
-
Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application
Finally, I developed two methods to transfer a GaAs-based device layer on a transparent GaP substrate (for emission wavelength longer than 560 nm), which involve multiple processing techniques. One approach also includes the regrowth step, which further indicates the bonded sample can further be …
-
Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new …
-
The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
Despite the vast use of metalorganic chemical vapor deposition (MOCVD) for the growth of optical and electronic devices, it is a process for which the details of the reaction mechanisms are not well understood. Efforts aimed at gaining insight into growth-related matters will be described here and …
-
Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors
… growth technique commonly used to grow III-V compound semiconductor materials. A review of many seminal studies investigating the growth mechanisms of GaAs epitaxial growth is presented. Carbon is an intrinsic impurity in GaAs and AlGaAs grown by MOCVD and a number of growth variables can be …
-
Photo-Hall studies of compound semiconductors
The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy …
-
Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide
… by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by …
-
III-V compound semiconductor selective area epitaxy on silicon substrates
In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the …
-
Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this …
-
Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide
… by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by …
-
Gallium Nitride Remote Epitaxy
… the material towards its physical limitations. Compound semiconductor materials are growing in importance because of their ability to offer superior performance across a wide range of applications in optoelectronics and power electronics. Unfortunately, the adoption of these new materials has …
-
Photo-hall studies of compound semiconductors
The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and m1crowave device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In0 . 53Ga0 . 47As. The …
-
Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization
Strain-induced self-rolled-up semiconductor nanotubes are a new type of building block for three-dimensional architectures. Semiconductor nanotubes (SNTs) take advantage of the lattice mismatch between different layers and are formed when the strained semiconductor layers are released from the …
-
Compound Semiconductor Material Manufacture, Process Improvement
IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are relative to discrete or multi-compound use of Gallium Arsenide or Indium Phosphide [III/V]. For MOVPE …