Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 153 for “"Complementary metal-oxide-semiconductor"”.
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… Apart from being a direct and wide band-gap semiconductor which can be useful for optoelectronic devices, GaN and its alloys have other material attributes like spontaneous and piezoelectric polarization, high electron mobility, and high saturation velocity for electrons. These properties …
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Design automation for high performance complementary metal oxide-semiconductor VLSI circuits
… addresses the circuit and layout issues of the Complementary Metal-Oxide-Semiconductor (CMOS) Very Large Scale Integrated (VLSI) circuit design. Dynamic CMOS circuits are implemented judiciously to increase the packing density and lower the power consumption. A design automation system, iCOACH, …
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Biological Agent Sensing Integrated Circuit (BASIC): A New Complementary Metal-oxide-semiconductor (CMOS) Magnetic Biosensor System
Fast and accurate diagnosis is always in demand by modern medical professionals and in the area of national defense. At present, limitations of testing speed, sample conditions, and levels of precision exist under current technologies, which are usually slow and involve testing the specimen under …
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A low dispersion 2-GHz comparator
… simulation awaiting fabrication. Index Terms-Complementary metal oxide semiconductor transistor technology (CMOS technology), very large scale integration (VLSI), application specific integrated circuit (ASIC), silicon germanium (Si-Ge), integrated circuits (IC), automatic test equipment …
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Design and analysis of an ASIC for energy harvesting applications
… ASIC for this system was designed using 0.6μm complementary metal-oxide-semiconductor (CMOS) technology.
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Crosstalk and noise in division-of-focal-plane polarimeters and polarization imaging applications
… onto an image sensor. Recent advances in complementary metal oxide semiconductor (CMOS) technology have led to sensors with pixel sizes on the order of a micron, which greatly increases spatial crosstalk. This work develops the fundamental limitations of DoFP polarimeters due to noise and …
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Colloidal quantum dot based light emitting devices on silicon substrate
… for commercialization but also allow complementary metal oxide semiconductor (CMOS) compatibility enabling integration of light sources within CMOS circuitry. Colloidal semiconductor nanocrystals have narrow emission spectra which makes them an excellent choice for active media in …
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Low Power Demodulator Design for RFID Applications
… Using this technique and working with 90 nm complementary metal-oxide-semiconductor (CMOS) technology, the circuit can operate with a supply voltage as low as 0.3 V, consuming a very small amount of power compared to other demodulators in the literature, making it suitable for ultra-low power …
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DESIGN, COMPACT MODELING AND CHARACTERIZATION OF NANOSCALE DEVICES
… and is gaining more and more interest. Nanoscale complementary metal oxide semiconductor (CMOS) transistors, being the backbone of the electronic industry, are pushed to below 10 nm dimensions using novel manufacturing techniques including extreme lithography. As their dimensions are pushed into …
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Novel polarization-diversity devices on a silicon-on-insulator platform.
… in recent years due to its compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which makes the mass production of photonics devices cost-effective. The intrinsic high-index contrast property of SOI allows for photonics with very small footprint, which is highly …
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Three-dimensional magnetic field sensor in IBM 0.18μm CMOS technology
… Magnetic Field Sensor (MFS) designed in standard Complementary Metal-Oxide-Semiconductor (CMOS) technology. A circular Vertical Hall Device (VHD) for horizontal magnetic field detection and a split- drain Horizontal Hall Device (HHD) for the vertical magnetic field detection are integrated to …
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Integrated optical phased arrays for three-dimensional display applications
… compatibility of silicon photonic platforms with complementary metal-oxide-semiconductor (CMOS) fabrication processes has facilitated a surge in the development of silicon-based integrated optical phased arrays (OPAs) for light detection and ranging (LiDAR) and free-space communications. However, …
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Towards an Improved Hardware Implementation of a Tone Mapping Algorithm for Wide Dynamic Range Image Display
… these two implementations, designed in 0.35 µm complementary metal oxide semiconductor (CMOS) technology, were simulated and tested in order to evaluate their quality. Objective assessments and detailed comparisons show that the low power and low area features of these hardware implementations …
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A CMOS-based Hartmann-Shack Sensor for Real-Time Adaptive Optical Applications
… of process parameters in CMOS-based sensors (Complementary Metal Oxide Semiconductor). A special problem in ophthalmic applications is the low available spot power below 1 nW.Adaptive optical systems have a growing field of applications in opthalmology. In every adaptive system there is the …
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Compact Optical Sensing Systems for pH and Other Substances Detection - Theory and Implementation
… project real-time optical pH sensor based on complementary metal–oxide–semiconductor (CMOS) contact imaging and microfluidics, an optical contact imaging sensor for pH detection with capillary microfluidics is proposed. The CMOS array detects the changes of light intensity after absorption by …
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A Silicon Germanium CMOS Linear Voltage Regulator for Wireless Agricultural Applications
… and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to be part of a project …
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System-Technology Co-Optimization of Scaled Electronics Based on Two-Dimensional Materials
Over the past 60 years, the semiconductor industry has focused on developing highly scaled electronic devices and high-density integrated circuits. However, bottlenecks have arisen recently as transistor dimensions approach the physical limits, and integration density is constrained. This thesis …
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Analysis of single event transients in arbitrary waveforms using statistical window analysis
… amplifiers, laser-induced transients in Complementary Metal-Oxide-Semiconductor (CMOS) phase-locked loops, and simulated transients in digital and analog circuits.The performance of the IRES filter in noisy environments shows that transients can be measured with higher fidelity than …
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A method for characterization of single-event latchup technologies as a function of geometric variation
Complementary metal-oxide-semiconductor (CMOS) technology is the dominant integrated circuit (IC) technology in modern electronics systems. As CMOS comprises of p-channel and n-channel transistors, there are parasitic PNPN paths that act as cross-coupled bipolar transistors capable of creating …
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Noise Optimization for High-Bandwidth Ion Channel Recordings
… A custom integrated amplifier in a 0.13-micron complementary metal oxide semiconductor (CMOS) process is designed for high-bandwidth ion channel recordings, and systems are designed to closely incorporate this amplifier with solid-state nanopore sensors, lipid membranes, and biological ion …
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