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Showing 1 to 1 of 1 for “"Complementary metal-oxide semiconductor radio frequency (CMOS RF) transmitter"”.
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Digitally enhanced CMOS RF transmitter with integrated power amplifier
An energy-efficient, 3.5 GHz, direct-conversion RF transmitter with integrated 23 dBm, Class-B power amplifier (PA) is fabricated in a 0.13 μm CMOS process. The TX chip is packaged using a low-cost chip-on-board (COB) technique. When 20-MHz bandwidth OFDM signals are transmitted, a high TX average …