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Showing 1 to 16 of 16 for “"Compact modeling"”.

  1. DESIGN, COMPACT MODELING AND CHARACTERIZATION OF NANOSCALE DEVICES

    Electronic device modeling is a crucial step in the advancement of modern nanotechnology and is gaining more and more interest. Nanoscale complementary metal oxide semiconductor (CMOS) transistors, being the backbone of the electronic industry, are pushed to below 10 nm dimensions using novel …

    purdue-thes Repository record for DESIGN, COMPACT MODELING AND CHARACTERIZATION OF NANOSCALE DEVICES (opens in a new tab)

  2. Compact modeling of circuits and devices in Verilog-A

    The compact model of a circuit or device is a system of linear and/or nonlinear differential equations that effectively models the behavior of the circuit or device. Compact modeling plays a critical role in circuit simulation, because in order to simulate a circuit with a specific component, the …

    mit Repository record for Compact modeling of circuits and devices in Verilog-A (opens in a new tab)

  3. Compact modeling of neutron damage effects in a bipolar junction transistor

    … approaches were taken in the development of a compact BJT model that include the effects of static neutron damage. One approach is based on the Gummel-Poon term for recombination current. The other approach is based on the Shockley-Read-Hall theory of recombination. Simulation results of the …

    unm Repository record for Compact modeling of neutron damage effects in a bipolar junction transistor (opens in a new tab)

  4. Methods for compact modeling of process variations in silicon photonics devices

    … worst-case variations. The response surface modeling method is employed to develop parameterized compact models. Example variation-aware compact models are generated using these methods for the directional coupler and the Y-branch, two passive devices widely used in silicon photonics. The use …

    mit Repository record for Methods for compact modeling of process variations in silicon photonics devices (opens in a new tab)

  5. Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments

    … temperature range specifications need an HBT compact model to accurately represent the device's performance.</p> <p>In this work, a compact model referenced at 300K was developed to accurately represent both DC and AC electrical performance of the SiGe HBT over an extended temperature range, …

    arkansas Repository record for Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments (opens in a new tab)

  6. Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation

    This dissertation presents a modeling and simulation study of graphene nano-ribbon and transition metal dichalcogenide field-effect transistors. Through compact modeling, SPICE implementation of the transistors is realized, and circuit-level simulation is enabled. Extensive simulation studies are …

    uiuc Repository record for Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation (opens in a new tab)

  7. GaN Electronics for High-Temperature Applications

    … technology and characterization platform, (2) compact modeling of monolithically integrated enhancement/depletion-mode HEMTs up to 500 °C HEMTs, (3) robustness-driven circuit design based on GaN technology, (4) demonstration of GaN-based combinational and sequential building blocks including …

    mit Repository record for GaN Electronics for High-Temperature Applications (opens in a new tab)

  8. Experimentally validated multiscale thermal modeling of electronic cabinets

    … important, due to growing power dissipation and compact packaging. Usually, multiple length scales of interest and modes of heat transfer are simultaneously present. A steady reduced order thermal modeling framework for electronic cabinets was developed to provide an efficient method to model …

    gatech Repository record for Experimentally validated multiscale thermal modeling of electronic cabinets (opens in a new tab)

  9. Mixed-domain simulation and hybrid wafer-level packaging of RF-MEMS devices for wireless applications

    … è basato sul concetto di modellazione compatta (compact modeling). Questo significa che il comportamento fisico di ogni componente elementare della libreria è descritto per mezzo di un insieme limitato di punti (nodi) di interconnessione verso il mondo esterno. La libreria comprende componenti …

    bologna Repository record for Mixed-domain simulation and hybrid wafer-level packaging of RF-MEMS devices for wireless applications (opens in a new tab)

  10. Reduced-order modelling, circuit-level design and SOI fabrication of microelectromechanical resonators

    … and switches. First, a new approach for compact modeling and simulation of these devices is presented. Then, a combined process flow for their simultaneous fabrication on a SOI substrate is proposed. Compact models for microresonators and switches are extracted by applying mathematical …

    bologna Repository record for Reduced-order modelling, circuit-level design and SOI fabrication of microelectromechanical resonators (opens in a new tab)

  11. Evaluating the effect of process variation on silicon and graphene nano-ribbon based circuits

    Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2012-04-21T15:49:15Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Rogachev_Artem.docx: 719809 bytes, checksum: a5e99a79e062ca8794a0646df6052ac8 (MD5) Rogachev_Artem.pdf: 1216501 bytes, …

    uiuc Repository record for Evaluating the effect of process variation on silicon and graphene nano-ribbon based circuits (opens in a new tab)

  12. Modeling and simulation of III-nitride devices and circuits for next generation communications and quantum computing

    Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2022-11-15 without embargo terms

    uiuc Repository record for Modeling and simulation of III-nitride devices and circuits for next generation communications and quantum computing (opens in a new tab)

  13. Model order reduction of electro-thermal MEMS

    The modeling of electro-thermal processes, for example Joule heating, is becoming increasingly important in microsystems (in the following MEMS) development. In microelectronic systems, for example, high temperatures may cause the malfunction or even destruction of the device. Other devices, such …

    freiburg-diss Repository record for Model order reduction of electro-thermal MEMS (opens in a new tab)

  14. Modeling and simulation of full-component integrated circuits in transient ESD events

    This thesis presents a methodology to model and simulate transient electrostatic discharge (ESD) responses of integrated circuits (IC). To obtain valid simulation results, the IC component must be represented by a circuit netlist composed of device models that are valid under the ESD conditions. …

    uiuc Repository record for Modeling and simulation of full-component integrated circuits in transient ESD events (opens in a new tab)