Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 20 for “"Channel Mobility"”.
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Study on Channel Mobility and Threshold Voltage Towards SiC CMOS Devices
付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」
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Modelling and enhancement of the channel mobility of 4H-SiC power MOS devices
… of the transistor by producing a relatively low channel mobility below 50cm²/(Vs) and inducing dynamic instabilities in the threshold voltage. Various novel processing methods have been developed to address these issues, with some of them achieving mobility values even above 100cm²/(Vs), yet most …
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Measuring channel mobility through the analysis of area-based change in analog experiments, with insights into alluvial environments
We quantify the mobility of alluvial river channels in order to better understand the relationship between channel mobility and fluvial environment. We analyze five analog experiments, performed between 2002 and 2007 at the Saint Anthony Falls Laboratory, for area-based change in river-channel plan …
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The Electrical Transport Study Of Graphene Nanoribbons And 2d Materials Beyond Graphene
… atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic bandgap was reported in this study. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width …
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Characterizing channel migration habits, sediment-transport capacity and flow dynamics in peatlands: an example from Cedar Creek, Minnesota U.S.A.
… conditions and morphodynamics of fluvial channels as they directly impact the evolution of these environments, primarily through migration and partitioning of channelized surface flow. However, peatland channel mechanics and morphodynamics are poorly understood. This thesis investigates …
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Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator
The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive …
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Simulation and fabrication of GaN-based vertical and lateral normally-off power transistors
… (MOSFETs) and the lateral high electron mobility transistors (HEMTs) designed for different breakdown voltage application and at different size scaling levels. The comparison between two structures revealed that the vertical MOSFETs have the potential to achieve an up to 50% higher …
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Study of Si1-xGex Junction Formation for SOI Based CMOS Technology
… field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially improved with this technology. In this dissertation, SiGe junction formation for silicon on insulator (SOI) based CMOS technology was investigated. Strain in epitaxially grown …
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Scattering in Nano-Electronic Devices
… high-x' stack is developed to predict inversion channel mobility. Impact of surface phonons (originating from high-a- dielectric) on mobility degradation is evaluated using the model, incorporating newly proposed criteria for determining Landau damping regimes. Phonon-electron interaction- the …
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Investigating rates and mechanisms of lateral erosion in a small bedrock river using erosion pins, structure-from-motion photogrammetry, and optically stimulated luminescence dating: Konza Prairie, northeast Kansas
… patterns of erosion along bedrock channel banks. Single-grain optically stimulated luminescence (OSL) dating of fluvial deposits overlying a strath terrace was used to determine the depositional age of fluvial deposits and infer the duration of lateral channel mobility during …
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AlGaN/GaN-based power semiconductor switches
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers …
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4H-SiC FinFET devices and modelling
… interface, resulting in extremely low electron mobility in the inversion layer (∼5cm2/(Vs)). Various novel processing techniques have been developed to address this issue, such as POCI3 annealing at 1000 ◦C, which increases mobility close to or even above 100cm2/(Vs) on the (0001)-face. Despite …
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Hot carrier degradation in deep submicron n-MOS technologies
… series resistance degradation, along with the channel mobility degradation. Therefore, in order to optimise the performance and reliability of these technologies it is necessary to quantify the roles of spacer and channel damages in determining their degradation behaviour. In this thesis the …
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Lattice mismatched compound semiconductors and devices on silicon
… semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and the degradation of IIIV MOSFET channel mobility remain two major challenges for III-V …
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Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain
… in transistor performance. Novel CMOS channel materials and device architectures are one option for enhancing carrier transport and increasing device performance. In this work strained SiGe and Ge are examined as a means of increasing the drive current in deeply scaled CMOS. As part of …
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Study on Carrier Trapping and Scattering Toward Modeling of SiC MOSFETs
付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
… devices need to meet challenges like improved channel mobility, reduced gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to overcome these challenges, improvements of the high-x film properties and deposition methods are …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… not dependent on the doses of Hf. Also, electron channel mobility was not degraded by Hf contamination. The amount of Hf diffused into the Si substrate during the high- k dielectric imposed negligible effects on silicon based MOS device characteristics in terms of C-V, J-V characteristics and …
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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching
Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN power HEMTs enable low specific on-resistance …
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Relays for Interference Mitigation in Wireless Networks
Wireless links play an important role in the last mile network connectivity. In contrast to the strictly centralized approach of today's wireless systems, the future promises decentralization of network management. Nodes potentially engage in localized grouping and organization based on their …