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Showing 1 to 3 of 3 for “"Carrier and Spin Relaxation"”.

  1. Probe of Coherent and Quantum States in Narrow-Gap Based Semiconductors in the Presence of Strong Spin-Orbit Coupling

    … project was to study some unexplored optical and magneto-optical properties of the newest member of III-V ferromagnetic structures, InMnSb, as well as InSb films and InSb/AlInSb quantum wells. The emphasis was on dynamical aspects such as charge and spin dynamics in order to address several …

    vt Repository record for Probe of Coherent and Quantum States in Narrow-Gap Based Semiconductors in the Presence of Strong Spin-Orbit Coupling (opens in a new tab)

  2. Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors

    As the switching rates in electronic and optoelectronic devices are pushed to even higher frequencies, it is crucial to probe carrier dynamics in semiconductors on femtosecond timescales. Time resolved spectroscopy is an excellent tool to probe the relaxation dynamics of photoexcited carriers; …

    vt Repository record for Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors (opens in a new tab)

  3. Spin and Carrier Relaxation Dynamics in InAsP Ternary Alloys, the Spin-orbit-split Hole Bands in Ferromagnetic InMnSb and InMnAs, and Reflectrometry Measurements of Valent Doped Barium Titanate

    … materials that I studied included InAsP, InMnSb and InMnAs, and BT-BCN. I have employed several advanced time resolved and magneto-optical techniques to explore unexplored properties of these structures. The first class of the materials were the ternary alloys InAsP. The electron g-factor of …

    vt Repository record for Spin and Carrier Relaxation Dynamics in InAsP Ternary Alloys, the Spin-orbit-split Hole Bands in Ferromagnetic InMnSb and InMnAs, and Reflectrometry Measurements of Valent Doped Barium Titanate (opens in a new tab)