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Showing 1 to 4 of 4 for “"Carrier Profile"”.

  1. Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser

    … error-free transmission at 85 °C. The dynamic carrier profile in the base of a transistor laser makes it possible to have a shorter carrier lifetime than in a diode laser. The first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a …

    uiuc Repository record for Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser (opens in a new tab)

  2. Effects of ion processing and substrate variables on electrical characteristics of GaAs

    … (improved transconductance, sharper carrier profile, variability in threshold voltage, significant backgating, etc.). The effects of Al<sub>.35</sub>Ga<sub>.65</sub>As buffers and low temperature GaAs buffers on the electrical properties of the overlying active GaAs are investigated. …

    vt Repository record for Effects of ion processing and substrate variables on electrical characteristics of GaAs (opens in a new tab)

  3. Investigation of MOS-Gated Thyristors and Power Diodes

    … transistor helps tailor an optimized on-state carrier profile to improve the diode switching characteristics. A novel self-aligned process is developed to fabricate the TBJD. Experimental characterization of the fabricated TBJD devices shows that the TBJD achieves superior dynamic …

    vt Repository record for Investigation of MOS-Gated Thyristors and Power Diodes (opens in a new tab)

  4. Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET]

    Lo sviluppo di MOSFET di potenza ad alte prestazioni in carburo di silicio (SiC) rappresenta un passo fondamentale per l'avanzamento della moderna elettronica di potenza. Grazie all'ampio bandgap, all'elevata conducibilità termica e all'alto campo elettrico, il 4H-SiC è emerso come materiale …

    catania Repository record for Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET] (opens in a new tab)