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Showing 1 to 20 of 31 for “"Carrier Concentrations"”.

  1. A quantum mechanical semiconductor device simulator

    … domain. The initial estimates about the carrier concentrations are developed from the Fermi energy distribution. Based on the carrier concentrations, the potential distribution inside the device is updated using the Poisson's equation. The updated potential distribution is then used in …

    vt Repository record for A quantum mechanical semiconductor device simulator (opens in a new tab)

  2. Experimental determination of the thermoelectric properties of porous silicon nanowires

    … was also employed to extract the free carrier concentrations as well as nanocrystalline size. We measured the Seebeck coefficient and thermal conductivity from 30 K to 400 K by a frequency domain technique. Analysis of Seebeck coefficient reveals the electron scattering mechanism in …

    uiuc Repository record for Experimental determination of the thermoelectric properties of porous silicon nanowires (opens in a new tab)

  3. Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)

    … to the theoretical analysis of Hall effect carrier concentrations and mobilities in n-type GaAs, InP, and their related direct gap semiconductor alloys is presented along with a thorough treatment of those factors affecting the measurement. The design and construction of the equipment used …

    uiuc Repository record for Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect) (opens in a new tab)

  4. Crystal Growth, Phase Transformations, and Electrical Properties of Metastable Gallium Antimonide-Germanium Alloys

    … using the regular solution model. The measured carrier concentrations and mobilities were consistent with the materials being disordered.

    uiuc Repository record for Crystal Growth, Phase Transformations, and Electrical Properties of Metastable Gallium Antimonide-Germanium Alloys (opens in a new tab)

  5. Auger-mediated processes and photoluminescence in group iv semiconductor nanostructures

    … (PL) quantum efficiency (QE) at low carrier concentrations. At higher carrier concentrations, the PL QE of these nanostructures is drastically reduced due to the onset of a fast non-radiative process attributed to Auger recombination. Moreover, this onset occurs earlier in structures …

    njit Repository record for Auger-mediated processes and photoluminescence in group iv semiconductor nanostructures (opens in a new tab)

  6. Electronic properties of printed nanoparticulate silicon

    … the material. All the layers showed at least two carrier types. The effect of particle loading and temperature on the electrical properties was also investigated. Although carrier concentrations are generally low, their mobility was found to be comparable to, or even better than, similar classes …

    cape-town Repository record for Electronic properties of printed nanoparticulate silicon (opens in a new tab)

  7. Reduced Indium Tin Oxide as a Transparent Superconductor

    … materials. Typical metals have a high carrier concentration and no band gap, resulting in strong absorption for light below x-ray frequencies [5]. However, certain degenerately doped semiconductors known as transparent conductive oxides have ultraviolet band gap energies, high …

    mit Repository record for Reduced Indium Tin Oxide as a Transparent Superconductor (opens in a new tab)

  8. On the growth and characterisation of Zinc Oxide

    … Doped ZnO demonstrated p-type conductivity, with carrier concentrations as high as 4.10*16 cm−3 under illumination for N-ZnO. P-ZnO displayed a fast-decaying photoconductive effect. High concentrations of dopant were found disadvantageous to crystalline and optical quality, but evidence of ABX …

    dcu Repository record for On the growth and characterisation of Zinc Oxide (opens in a new tab)

  9. Designing a Simulator for an Electrically-Pumped Organic Laser Diode

    … optical gain. The challenge occurs when charge carriers appear in the organic material. The charge carriers must reach a concentration such that population inversion occurs producing optical gain. However, between the overlapping emission and absorption spectra of the organic material and …

    calpoly Repository record for Designing a Simulator for an Electrically-Pumped Organic Laser Diode (opens in a new tab)

  10. Three-particle mechanism for unconventional superconductivity with potential applications in moiré materials

    … for superconductivity encounter at low charge carrier concentrations. As a result, it is able to capture the full crossover from Bardeen-Cooper- Schrieffer behaviors to the Bose-Einstein condensation of pairs, which has recently attracted a lot of experimental attention. Furthermore, the …

    mit Repository record for Three-particle mechanism for unconventional superconductivity with potential applications in moiré materials (opens in a new tab)

  11. Charge Transport Physics of Organic Semiconductors at High Carrier Densities

    … physics in this class of materials at low carrier densities of less than 10¹⁸ to 10¹⁹ cm¯³ has been relatively well established, the physics at much higher carrier densities of 10²⁰ to 10²¹ cm¯³ remains poorly understood. In this transport regime there is on the order of one charge per …

    cambridge Repository record for Charge Transport Physics of Organic Semiconductors at High Carrier Densities (opens in a new tab)

  12. Growth and Characterization of (InGa)2O3 Alloys

    … partial oxygen pressure during growth. This high carrier concentrations with wide bandgap also makes this material useful for transparent conductors and UV applications.

    tdl Repository record for Growth and Characterization of (InGa)2O3 Alloys (opens in a new tab)

  13. Physics and simulation of transport processes in hybrid organic semiconductor devices

    … it poses a unique challenge: the physics of carrier and excitation transport in amorphous semiconductors is fundamentally different from their crystalline semiconductor counterparts. Excitations remain localized on single molecules or nanocrystals; the drift-diffusion equations, which …

    mit Repository record for Physics and simulation of transport processes in hybrid organic semiconductor devices (opens in a new tab)

  14. Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors

    … device progress was achieving high, bulk carrier concentrations through impurity doping. Low-temperature epitaxial methods are investigated and found to play a key role in enabling the doping of AlN and the eventual realization of AlN-based semiconductor devices. Both silicon and beryllium …

    gatech Repository record for Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors (opens in a new tab)

  15. Improved catalysts with properties controlled by semiconductor band engineering

    Difficulties in achieving control over carrier concentration have impeded progress toward tailoring the carrier concentration in semiconducting oxide supports for metal catalysts. Such tailoring could make possible the intentional exploitation of the Schwab effect, in which the carrier

    uiuc Repository record for Improved catalysts with properties controlled by semiconductor band engineering (opens in a new tab)

  16. Electronic transport in Lithium Nickel Manganese Oxide, a high-voltage cathode material for Lithium-Ion batteries

    … Such processing has a great effect on the concentrations of electronic charge carriers, and thus an effect on the DC electronic conductivity of the material. This conductivity was thus measured for both processing conditions as a function of the lithiation state, and then related to carrier

    mit Repository record for Electronic transport in Lithium Nickel Manganese Oxide, a high-voltage cathode material for Lithium-Ion batteries (opens in a new tab)

  17. Study of Charged Liquid Cluster Beam Generation and Application to Processing of Thin Films and Nanoparticles

    … $1.60 \times 10\sp{-2}\ \Omega$-cm. The electron carrier concentrations were in the range of 3.33-5.35 $\times\ 10 \sp{19}$ cm$\sp{-3}$ and the mobilities were 7.30-19.07 cm$\sp2$V$\sp{-1}$s$\sp{-1}.$ Optically active, highly concentrated Er$\sp{3+}$-$\rm Al\sp{3+}$ co-doped silica thin films were …

    uiuc Repository record for Study of Charged Liquid Cluster Beam Generation and Application to Processing of Thin Films and Nanoparticles (opens in a new tab)

  18. Photoconductivity and minority carrier lifetime in tin sulfide and gallium arsenide semiconductors for photovoltaics

    … program (SCAPS), improvements in the minority-carrier lifetime of cell materials show not only significant improvements in cell efficiencies, but also an un-masking of improvements by other properties, which are inhibited when the lifetime is too short. This work aims to calculate the …

    mit Repository record for Photoconductivity and minority carrier lifetime in tin sulfide and gallium arsenide semiconductors for photovoltaics (opens in a new tab)

  19. Silicon molecular beam epitaxy

    … of Sl-MBE material with bulk-like mobilities and carrier concentrations up to 1x10(to the power of 20) cm(to the power of -3) and giving excellent dopant profile control over a range of growth temperatures. The second technique called Potential Enhanced Doping (PED) involves applying a substrate …

    london-metro Repository record for Silicon molecular beam epitaxy (opens in a new tab)

  20. The effect of high pressure on S and Te-doped GaAs1-xPx

    … are doped with sulfur and tellurium and have carrier concentrations in the 10^18 - 10^19 range. Changes in the resistivity as large as four orders of magnitude are observed at 77 0K for samples in the composition range 0.30 ~ x ~ 0.4~ The behavior of the samples is consistent with a model in …

    uiuc Repository record for The effect of high pressure on S and Te-doped GaAs1-xPx (opens in a new tab)

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