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Showing 1 to 13 of 13 for “"Carbon Nanotube Field-effect transistors"”.

  1. Carbon nanotube field effect transistors for power application

    Carbon nanotubes (CNTs) are nanometer-diameter cylinders formed from rolled-up graphene sheets which have found widespread interests due to their many excellent electrical properties. In particular, most of them are direct bandgap semiconductors from which carbon nanotube field effect transistors

    mit Repository record for Carbon nanotube field effect transistors for power application (opens in a new tab)

  2. Analysis of physical mechanisms for the detection of DNA in carbon nanotube field effect transistors for bio-sensing applications

    This thesis discusses the use of carbon nanotube field effect transistors as sensors for DNA. It proposes a band-gap modulation as the underlying physical mechanism by which detection occurs. Previous works have established that either Schottky--barrier modulation or electro--static gating are the …

    uiuc Repository record for Analysis of physical mechanisms for the detection of DNA in carbon nanotube field effect transistors for bio-sensing applications (opens in a new tab)

  3. Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design

    The difficulty in shrinking silicon transistors past a certain feature size has been acknowledged for years. Carbon nanotubes (CNTs) offer a technology with an exciting solution to the scaling issues of transistors and interconnects and with the possibility of coexistence in the present silicon …

    mit Repository record for Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design (opens in a new tab)

  4. Optimization of purely semiconducting carbon nanotube complementary field effect transistors

    … that have been discovered, single walled carbon nanotubes (SWNTs) have properties that make them uniquely well suited for high-performance carbon nanotube field-effect transistors (CNTFETs). The most advanced opportunities, however, demand optimized properties of semiconducting SWNTs in …

    uiuc Repository record for Optimization of purely semiconducting carbon nanotube complementary field effect transistors (opens in a new tab)

  5. Functionalization of CNFET arrays for chemical sensing

    … an integrated gas sensor array comprising 2048 carbon nanotube field-effect transistors (CNFETs), functionalized with conductive metal-organic frameworks (cMOFs) and metal nanoparticles. Our functionalization approach enhances sensor responses by up to two orders of magnitude and enables on-chip …

    mit Repository record for Functionalization of CNFET arrays for chemical sensing (opens in a new tab)

  6. Overcoming nanoscale variations through statistical error compensation

    … to a computational kernel implemented with carbon nanotube field-effect transistors (CNFETs). With the aid of a well developed CNFET delay distribution modeling method, circuit simulations show up to 90× improvement of the SSNOC-based design in the circuit yield over the conventional design. …

    uiuc Repository record for Overcoming nanoscale variations through statistical error compensation (opens in a new tab)

  7. Molecular-scale devices from first principles

    … that include metal-molecule junctions, carbon-nanotube field effect transistors, and nanostructured metals or semiconductors. For such complex systems, characterizing the properties of the elementary building blocks becomes of fundamental importance. In this thesis we employ …

    mit Repository record for Molecular-scale devices from first principles (opens in a new tab)

  8. Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors

    Metal-oxide semiconductor field-effect transistor (MOSFET) scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Moore’s Law. After forty years of advances in integrated circuit (IC) technology, the scaling of silicon (Si) MOSFET has …

    cambridge Repository record for Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors (opens in a new tab)

  9. Finite Element Method Modeling Of Advanced Electronic Devices

    … for future nano-scale system. Non-quasi-static effects in AC characteristics of carbon nanotube field-effect transistors are examined by solving a full time-dependent, open-boundary Schrödinger equation. The non-quasi-static characteristics, such as the finite channel charging time, and the …

    ucf

  10. Improvement of carbon nanotube-based field-effect transistors by cleaning and passivation

    Ever since their discovery in 1991, carbon nanotubes are of great interest to the scientific community due to their outstanding optical, mechanical and electrical properties. Considering their impressive properties, as for instance the high current carrying capability and the possibility of …

    qucosa-diss

  11. In-Memory Computing Architecture for Deep Learning Acceleration

    … conversion circuits implemented with carbon nanotube field-effect transistors. The area-consuming eDRAM buffers are replaced by dense cross-point Spin Transfer Torque Magnetic RAM. I explored the design space and demonstrated that MARVEL can provide further improved power efficiency …

    duke Repository record for In-Memory Computing Architecture for Deep Learning Acceleration (opens in a new tab)

  12. Integrating physical unclonable functions from novel nanomaterials, circuit elements, and memory technologies into future hardware architectures

    … Unclonable Functions (PUFs) have proven to be an effective solution for key generation, device authentication, and identification tasks. PUFs leverage inherent variations in hardware components to produce unique, device-specific keys. For a well-designed PUF, these keys can be reproduced reliably …

    passau-thes Repository record for Integrating physical unclonable functions from novel nanomaterials, circuit elements, and memory technologies into future hardware architectures (opens in a new tab)

  13. Hardware security design from circuits to systems

    … randomness of the challenge-response behavior. Carbon nanotube field-effect transistors (CNFETs) have been shown to have excellent electrical and unique physical characteristics. They are a promising candidate to replace silicon transistors in future very large scale integration (VLSI) designs. …

    uiuc Repository record for Hardware security design from circuits to systems (opens in a new tab)