Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 16 of 16 for “"Carbon Contamination"”.
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Low-Temperature Chemical Vapor Depostion of Ruthenium and Manganese Nitride Thin Films
… carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high …
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Cleaning of tin debris by reactive ion etching in a discharge-produced EUV plasma source
… the plasma in addition to the desired light. The contamination by such debris will critically affect the life time of the mirror as well as the total light output. The contamination by debris is more serious when making an EUV-emitting plasma with tin (Sn). Sn has a high conversion efficiency …
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Integrated Growth and Process Technology for Atomically Thin Single Crystal Films
… addressed. Firstly, the issue of minute catalyst contamination is systematically studied through the use of Raman spectroscopy, image analysis and film etching to characterise the defect density of the graphene film under different parameters. It was found that the current best method of …
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Low temperature epitaxial silicon growth using electron cyclotron resonance plasma deposition
… during growth. This reduces the oxygen and carbon contamination in the film as well as increasing the number of available growth sites on the surface by displacing the adsorbed hydrogen. By optimizing the growth pressure, substrate temperature, microwave power, substrate bias and silane to …
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The chemistry of metalorganic chemical vapor deposition from a copper alkoxide precursor
… to the clean elimination pathway, leading to carbon contamination of the deposited films. The deposition chemistry of copper dimethylaminoethoxide is not affected by irradiation with ultraviolet light of wavelengths between 360 nm and 600 nm. The ultraviolet light source was a Spectronics …
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The Use of Secondary Ion Mass Spectrometry to Advance Integrated Process Technology for 2D Materials
… quality, mm-sized crystals. Next, we investigate contamination occurring from the gas phase during CVD process. In this context, we employ ToF-SIMS to evaluate carbon contamination arising during WS2 synthesis from metallo-organics precursors. Through this new understanding we were able to …
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The content and stable isotopic composition of carbon in spherical micrometeorites
… static gas source mass spectrometer for carbon isotope measurements built in the Planetary Sciences Unit has been tested and shown capable of routinely analysing <i>ca</i>.1 nanogram of carbon (as carbon dioxide) to precisions of <i>ca</i>.±1‰. To enable this gain in sensitivity to be …
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Ultraconformal chemical vapor deposition and synthesis of transition metal nitride films
… coefficients and low surface mobilities. Carbon contamination in the films is minimal for manganese, iron, and cobalt nitrides, but similar to the nitrogen concentration in nickel nitride. Thermal CVD at room temperature is highly unusual, but iron nitride grows rapidly at 25 °C. The …
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Optical property studies and metalorganic chemical vapor deposition of ferroelectric thin films
… of the films. The AES spectra also showed no carbon contamination in the bulk of the films. As-deposited films were dense and showed uniform and fine grains. The film (Pb/Zr/Ti = 50/41/9) annealed at 6QQOC showed a spontaneous polarization of23.3 pC/cm² and a coercive field of 64.5 kV /em.
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Deposition of p-type metal oxide semiconductors for large-area electronic display and solar cell applications
… this particular PECVD system, resulting in high carbon contamination and inhibited growth. Therefore, focus turned to an alternative precursor (Cu(hfac)(tmvs)) and the successful deposition of p-type Cu₂O using PECVD has been demonstrated, with films exhibiting a Hall mobility of 1.48 cm²(Vs)⁻¹, …
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Removal of organic contaminants from lithographic materials
… amount of photon loss for illumination, however contamination in the sys- tem is unavoidable, especially due to carbon growth on the multilayer mirror collectors and to soft defects in the form of organic contamination on the mask. Traditional cleaning methods employ the use of wet chemicals to …
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Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity Incorporation
… can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as opposed to material …
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Role of impurities, LiF, and processing on the sintering, microstructure, and optical properties of transparent polycrystalline magnesium aluminate (MgAl2O4) spinel, The
… in hot-pressed spinel compacts was found to be carbon contamination from graphitic hot-press components and it could be completely eliminated with proper shielding. Hot-press experiments with Al2O3, lithium, and fluorine additives, along with thermodynamic simulations and spectrophotometry …
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Application and analysis of the constant photocurrent method in studies on amorphous silicon and other thin-film semiconductors
… against light-soaking as long as significant contamination does not occur in the deposition process.Depth profiling by chemical etching and correlation of infrared spectroscopy (FTIR) and CPM results are used to analyse the effect of oxygen and carbon contamination on the photoelectrical …
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From Micro- to Nano-porous Cellular Materials with Layered 2D Microstructure
… growth of WS$_2$ films with low levels of carbon contamination. Furthermore, the reaction process developed herein exhibited a self-limiting monolayer growth behaviour with exposure cycles lasting just 10 minutes, a significant improvement over prior MOCVD processes requiring growth times …
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Syntheses, properties, and reactions of transition metal complexes of di(tert-butyl)amide and 2,2,6,6-tetramethylpiperidide
… from Mn (2.5) to Fe (4) to Co (4.6-6) to Ni (9). Carbon contamination in the films is minimal for the manganese, iron, and cobalt nitride films, but similar to the nitrogen content in the nickel nitride films. Comparing the growth onset temperatures with the decomposition temperatures of the …