Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 21 for “"Capture cross-section"”.
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Oxide charge traps and interface states at the silicon-silicon dioxide interface
… revealed neutral, donor-like, hole traps with capture cross sections of 6xlO-14cm2 and lxlO-15cm2. In addition, an acceptor-like electron trap with a capture cross section of lxlO-15cm2 was detected in three devices. These traps, after being positively charged by hole capture were efficient …
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Impact of nuclear data libraries for criticality calculation of HTGR
… its criticality to be more sensitive to C-12 capture and elastic scattering cross section. For criticality calculations, using JENDL-5 instead of ENDF/B-VIII.1 leads to a Δk≈−200 pcm for the HTTR and a Δk≈−360 pcm for HTR-10. The most significant contributors are the C-12 capture cross …
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Radiation damage effects in charge coupled devices
… of bulk defects. The measured energy level, capture cross section and introduction rate of the main radiation induced defect agrees well with published results for the Si-E centre. Annealing studies are also presented. A model for the charge transfer degradation is proposed. This includes the …
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Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… applications. Additionally, the high neutron capture cross-section of the isotope boron-10 makes hBN a unique material for neutron detector applications. Its similar in-plane lattice constant to graphene and chemical inertness and resistance to oxidation makes hBN an ideal material for the …
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Neutron Measurements and Reactor Antineutrino Search with the SNO+ Detector in the Water Phase
… phase, an $^{241}$Am$^{9}$Be source is deployed across the detector volume to calibrate the detector's energy response and its response to neutrons. The $^{241}$Am$^{9}$Be source emits a unique coincidence signal with the prompt event being a 4.4 MeV $\gamma$ and the delayed a neutron capture …
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Photoconductivity in amorphous silicon
… level upwards to 0.6eV below E<sub>c</sub>. The capture cross section of these states was of a value expected for the neutral dangling bond, so they have been denoted as D states. States outside this energy were seen to be ineffective as recombination centres. The model thus has features …
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Electrical studies of silicon and low K dielectric material
… The characteristic energy level and capture cross-section of the traps in the semiconductor energy gap can be extracted from DLTS temperature scans. Coupled with CV free carrier concentration profile, isothermal profiling by DLTS can determine the distribution of electrically active …
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Electrical study of molybdenum in silicon and fluorinated SiO₂ for interlayer dielectrics
… The energy level of molybdenum was 0.3eV and the capture cross section was 5.5x10·16cm2. At high temperatures, the diffusion behavior of molybdenum exhibited a Gaussian profile. At low temperatures, however, the profiles exhibited an initial kick-out mechanism followed by normal diffusion. …
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A lattice boltzmann/s n framework for coupled heat transfer and neutron transport problems
… conductivity and temperature-dependent neutron cross sections. The neutron transport equation is solved using the discrete ordinates method (SN ); and the heat conduction equation is solved using the lattice Boltzmann method (LBM). In the SN method, the angle in the integro-differential form of …
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In vivo detection of gadolinium by prompt gamma neutron activation analysis: An investigation of the potential toxicity of gadolinium-based contrast agents used in MRI
… Gadolinium has the highest thermal neutron capture cross section of all the stable elements. Gadolinium-based contrast agents are widely used in magnetic resonance imaging (MRI). The primary intention of this work is to quantify <em>in vivo</em> Gd retention to investigate the potential …
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Recombination lifetimes in gamma-irradiated silicon
… of the ratio of the hole and electron Qapture cross-sections. The 0.18 ev level controlled the lifetime in the room temperature region in the pulled material, and the 0.3 ev level controlled the lifetime at all measured temperatures in float-zoned material whose resistivity was 70 ohm-em or …
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Point defect engineering in germanium
… the determination of the activation energy, capture cross-section, and concentration of the said defects. By studying their electronic properties, annealing kinetics, and introduction rates, we were able to separate vacancy-containing from interstitial-containing defects and gain insight on …
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The design and testing of integrated circuits for submillimeter-wave spectroscopy
… both phenomena to a reduction of the electron capture cross section of donor states due to electron heating and Coulomb-barrier lowering. The second topic is a novel circuit for ultrafast measurements with coplanar waveguide transmission lines. The circuit contains photoconductive switches that …
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Feasibility Study of Minor Actinide Transmutation In Light-Water Reactors With Various Am/Cm Separation Efficiencies
… environment. Because of the greater fission to capture cross section ratio in a fast neutron spectrum, the transmutation of MA is most effective in fast spectrum systems. However, MA transmutation can be carried out, albeit less effectively, in a thermal spectrum. This work examines MA …
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Electrical characterisation of defects in wide bandgap semiconductors.
… combination of high-resolution LDLTS and direct-capture cross-section measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS …
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Theory of Modulation Response of Semiconductor Quantum Dot Lasers
… results are obtained:<br /><br />1) Carrier capture delay from the optical confinement layer into QDs<br /><br />Closed-form analytical expressions are obtained for the modulation bandwidth omega_{-3 dB} of a QD laser in the limiting cases of fast and slow capture into QDs. omega_{-3 dB} is …
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Study of deep level defects of N+-CdS/P-CdTe solar cells
… if the temperature dependence of the carrier capture cross-section is neglected. Therefore, the location of traps is derived using a Shockley-Read-Hall recombination model with modified assumptions. A Cu-related deep level defect with activation energy of 0.57eV is observed for Cu evaporated …
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Advancements in Hexagonal Boron Nitride for Thermal Neutron Detection Applications
… to this research effort, a large thermal neutron capture cross section when 100% isotopically enriched with 10B. However, as with all emerging materials, many important physical properties have yet to be fully explored and documented. Discussed in this dissertation are major achievements in the …
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Characterization of high-k layers as the gate dielectric for MOSFETs
… components to trapping, trap location, and the capture cross section and trapping kinetics. It is shown that the use of pulse transfer characteristic technique is essential for measuring electron trapping, since the traditional quasi-dc transfer characteristic is too IV ABSTRACT slow and the …
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Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
… the interface state density as well as the trap capture cross section. The interface state density levels in the devices was experimentally determined by use of two high resolution techniques: the ac conductance and the charge pumping techniques. Both methods gave similar values of mean interface …
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