Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 20 for “"CONTACT RESISTIVITY"”.
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Analysis of Mo sidewall ohmic contacts to InGaAs fins
… nanowire field-effect-transistor, the Ohmic contact at the top of the nanowire not only covers the top surface, but also wraps around the sidewall. Because the sidewall is considered to be different from the top surface, it is necessary to study the sidewall Ohmic contact properties such as …
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Modeling and Electrical Characterization of Ohmic Contacts on n-type GaN
… operation and efficient performance. The metal contacts on semiconductors are essential as the interface properties affect the semiconductor performance and device operation. The low resistance ohmic contacts for n-GaN have been well established while most p-GaN devices have still high contact …
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Computational study of advanced semiconducting materials for next-generation electronic devices
… high dopant activation and insufficiently low contact resistivity for InGaAs, and strong degree of dopant segregation towards the surface for Ga2O3. In this thesis, we address these challenges with a computational modeling approach, based on ab initio density functional theory calculations. Our …
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Platform for monolithic integration of III-V devices with Si CMOS technology
… CMOS devices is sought. A method of making ohmic contact to III-V materials through Si encapsulation layers, using Si CMOS technology, is established. The metallurgies and electrical characteristics of nickel silicide structures on Si/III-V films are investigated and the NiSi/Si/III-V structure is …
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Development and Characterization of Inkjet-Printed Poly-Si Passivating Contacts for Silicon Solar Cells
… of polycrystalline silicon (poly_Si) passivating contacts, which consist of a doped poly_Si layer and an ultra_thin SiOx layer. This structure has driven the efficiency of crystalline silicon (c_Si) solar cells to exceed 26%. Further improvements can be achieved by incorporating localized poly_Si …
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Development and Characterization of Inkjet-Printed Poly-Si Passivating Contacts for Silicon Solar Cells
… of polycrystalline silicon (poly_Si) passivating contacts, which consist of a doped poly_Si layer and an ultra_thin SiOx layer. This structure has driven the efficiency of crystalline silicon (c_Si) solar cells to exceed 26%. Further improvements can be achieved by incorporating localized poly_Si …
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Fabrication and Characterization of Thermoelectric Materials and Their Stable Contacts at Elevated Temperatures
Contact resistance plays an important role in maintaining high device performance in thermoelectric (TE) generators and coolers. In order to achieve 95% device efficiency, the contact resistance needs to be < 10% of the total leg resistance. Therefore, stable contact electrodes with low contact …
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High-Performance Gateless Iii-Nitride Microwave Switches
… applications. However, relatively high ohmic contact resistivity, large OFF-state capacitance, and difficulty in gate alignment limit HFET's application for RF switching to frequencies not exceeding 6 GHz. In this dissertation, a new type of gateless microwave switch using capacitively-coupled …
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Nano-scale metal contacts for future III-V CMOS
… to shrink below 10 nm, and the source and drain contacts must also decrease to a comparable dimension. A concern about contact scaling is the increase of source resistance. It is predicted that the source resistance will increase exponentially when the contact length is decreased to the nanometer …
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Study of Si1-xGex Junction Formation for SOI Based CMOS Technology
… Both channel mobility and source/drain contact resistivity are substantially improved with this technology. In this dissertation, SiGe junction formation for silicon on insulator (SOI) based CMOS technology was investigated. Strain in epitaxially grown films on SOI films and silicon …
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Defect Engineering in Cuprous Oxide (Cu₂O) Solar Cells
… I investigate the formation of good ohmic back contacts on Cu₂O absorber layer and demonstrate that low contact resistivity can be achieved with a variety of metals on heavily doped Cu₂O films by forming a tunnel junction. Then, I apply synchrotron-based X-ray absorption spectroscopy (XAS) to …
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Development of InAlN HEMTs for space application
… was optimised by adjusting the metal Ohmic contact formation process (specifically metal stack thicknesses and anneal conditions) and surface passivation techniques (plasma power during dielectric layer deposition), based on an existing AlGaN HEMT process. This resulted in both a reduction …
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A novel room temperature contacting technique applied to silicon solar cells
A novel room temperature technique for ohmic contact formation to silicon has been investigated for application in silicon solar cells. Point-contacting by Localised Dielectric Breakdown (PLDB) relies on localised high doping to ensure electric field based breakdown of a passivating dielectric …
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Guided Wave Actuation for Enhanced Damage Identification in Carbon Fiber Reinforced Polymer Material Using Electrical Resistance Tomography
… for damage identification. The physical contact of embedded crack faces leads to current paths through the crack that limits the accuracy and resolution of ERT damage identification. To overcome this limitation, a new hybrid NDE technique that combines wave actuation with ERT is proposed. …
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p-Channel gallium nitride transistor on Si substrate
… can be attributed to the high source and drain contact resistances. In this thesis, we successfully improved the contact resistances through the development of optimum fabrication process, and a record contact resistivity of 4.83 x 10-6 [Omega]2 - cm 2 to p type-GaN was demonstrated. Finally, …
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A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition
… (AFM) for surface topology, TLM for metallic contact resistivity, X-Ray diffraction for crystal quality and epitaxial layer structure, and Hall-Effect measurement for doping concentration characterization and material resistivity. Because the IQE gives us a direct assessment of the active …
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The design and thermal measurement of III-V integrated micro-coolers for thermal management of microwave devices
… of the micro-cooler. To measure the specific contact resistivity of the superlattice based micro-cooler contacts, the Reeves & Harrison TLM (transmission line method) was used as it included both horizontal and vertical components of the contact resistance. It was found, for the GaAs based …
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Charge transport and spectroscopic analysis of high-mobility molecular semiconductors
… an effective determination of the interlayer resistivity of molecular semiconductors, demonstrating a good agreement with conventional contact resistivity measurements. Herein, the described V-TLM method lays the groundwork for studying the out-of-plane conductivity as an inherent property of …
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Graphene Nanotechnology the Next Generation Logic, Memory and 3D Integrated Circuits
… challenge of providing reliable and efficient contact between 2D materials like MoS2 and the metal is still unresolved. The contact resistance between metal and MoS2 limits the application of MoS2 in current semiconductor technologies. In this paper, a detail analysis of metal-MoS2 contact has …
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ΗΛΕΚΤΡΙΚΕΣ ΙΔΙΟΤΗΤΕΣ ΛΕΠΤΩΝ ΥΜΕΝΙΩΝ ΜΕΤΑΛΛΟΥ-ΠΥΡΙΤΙΟΥ
ΜΕΛΕΤΩΝΤΑΙ Ο ΤΡΟΠΟΣ ΠΑΡΑΣΚΕΥΗΣ ΚΑΙ ΟΙ ΗΛΕΚΤΡΙΚΕΣ ΙΔΙΟΤΗΤΕΣ ΛΕΠΤΩΝ ΥΜΕΝΙΩΝ ΕΝΩΣΕΩΝ ΜΕΤΑΛΛΟΥ-ΠΥΡΙΤΙΟΥ (SILICIDES). ΜΕΤΑ ΤΗΝ ΠΑΡΑΣΚΕΥΗ, ΜΕ ΘΕΡΜΙΚΗ ΚΑΤΕΡΓΑΣΙΑ ΕΝ ΚΕΝΩ, ΤΩΝ ΛΕΠΤΩΝ ΥΜΕΝΙΩΝ ΤΩΝ ΕΝΩΣΕΩΝ ΜΕΤΑΛΛΩΝ-ΠΥΡΙΤΙΟΥ ΑΚΟΛΟΥΘΕΙ Η ΑΝΑΛΥΣΗ ΤΩΝ ΕΝΩΣΕΩΝ ΠΟΥ ΣΧΗΜΑΤΙΣΘΗΚΑΝ ΜΕ ΤΗΝ ΧΡΗΣΗ ΤΩΝ ΑΚΤΙΝΩΝ Χ, …