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Showing 1 to 6 of 6 for “"CBRAM"”.
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… and 2) the filamentary conductive bridge RAM (CBRAM) which holds the promise of even better scaling potential, less power consumption, and faster access times. This thesis focuses on several aspects of the CBRAM technology. CBRAM devices are based on nanoionics transport and chemo-physical …
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Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
… The conductive bridge random access memory (CBRAM) is one of the most promising candidates. CBRAM shows unique nanoionics-based filamentary switching mechanism. Compared to flash memory, the advantages of CBRAM include excellent scalability, low power consumption, high OFF-/ON-state …
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Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
… in the Conductive Bridge Random Access Memory (CBRAM) and Resistive Random Access Memory (RRAM) because of their excellent scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been proposed to explain the …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
… Cu/TaOx/Pt device have been proven to be good CBRAM device due to its excellent unipolar and bipolar switching characteristics, device performance, retention, reliability. If Cu/TaOx/Ru device displays satisfactory resistive switching behavior, Cu/porous low-k dielectric/Ru structure could be …
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Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array
… encompass not only the choice of materials of a CBRAM cell proper, but also the way the cell is embedded within BEOL. In case of the inert electrode, the metal interfacing the solid electrolyte (e.g. TaOx) has to be supplanted by a glue layer, and heat transport layer, leading to an engineering …
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Resistive Switching in Porous Low-k Dielectrics
Integrating nanometer-sized pores into low-k ILD films is one of the approaches to lower the RC signal delay and thus help sustain the continued scaling of microelectronic devices. While increasing porosity of porous dielectrics lowers the dielectric constant (k), it also creates many reliability …