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Showing 1 to 10 of 10 for “"C2F6"”.

  1. Thermoelastic and dynamical properties of C2F6

    … fluorine atoms and diffraction patterns of solid C2F6 from 20 K up to its melting point of 173.3 K, and the momentum distributions of carbon and fluorine in liquid C2F6 at 180 K. At high temperatures, heavy diffuse scattering indicates much molecular orientational disorder. On cooling, a …

    uiuc Repository record for Thermoelastic and dynamical properties of C2F6 (opens in a new tab)

  2. Untersuchungen zur Modifizierung von Folien und Nadelfilzen aus Polyethylenterephthalat mit Fluorcarbonplasmen

    … of PET foils and needlefelts will be presented. C2F6 and mixtures of C2F6 with C2H4 were used as process gases. Wetting properties were determined by contact angle measurements and drop penetration tests. The plasma induced chemical properties of treated surfaces were investigated by x-ray …

    aachen Repository record for Untersuchungen zur Modifizierung von Folien und Nadelfilzen aus Polyethylenterephthalat mit Fluorcarbonplasmen (opens in a new tab)

  3. Fundamental investigations on the barrier effect of polyester micro fiber fabrics towards particle-loaded liquids induced by surface hydrophobization

    … used: - Saturated fluorine compounds: CF4 and C2F6 - Reducing agent: H2 and C2H4 The exposure of the substrate to a pure C2F6 discharge resulted in higher hydrophobicity than the substrates exposed to CF4 plasma. Stepwise increased mixture of H2 or C2H4 to a proportionally decreased amount of …

    qucosa-diss

  4. Study of surface kinetics in PECVD chamber cleaning using remote plasma source

    … from the bonding energy of C-F bonding in C2F6. Experimental result shows that C2F6 + 02 gas requires more power than NF3 gas to dissociate in the plasma due to the different resistivity. The second object is to understand gas phase reactions and surface reactions among neutrals in the …

    mit Repository record for Study of surface kinetics in PECVD chamber cleaning using remote plasma source (opens in a new tab)

  5. Chemical studies of plasma etchants used in integrated circuit manufacture

    … for by the models produced. Si etch rates in CF4/C2F6 and CHF3 as a function of the addition of oxygen-containing additives (02, N20 and CO2) are shown to be consistent with a simple competition between F, 0 and CFx species for Si surface sites. For the range of conditions studied, Si02 etch rates …

    aston Repository record for Chemical studies of plasma etchants used in integrated circuit manufacture (opens in a new tab)

  6. An experimental study and modeling of Transformer-Coupled Toroidal Plasma processing of materials

    … gas temperature of fluorocarbon plasmas. In a C2F6 discharge at a power density of 15 W/cm3, rotational and translational temperatures above 5000K were observed while vibrational temperatures above 8000K were found. The temperature measurements using C2 molecules were validated by the addition …

    mit Repository record for An experimental study and modeling of Transformer-Coupled Toroidal Plasma processing of materials (opens in a new tab)

  7. Μεταβολή επιφανειακών ιδιοτήτων φυσικών και συνθετικών υφασμάτων με πλάσμα χαμηλής και ατμοσφαιρικής πίεσης

    … της επιφάνειας, στη διερεύνηση της επίδρασης του C2F6 πλάσματος για την ενίσχυση της υδροφοβικότητας καθώς και στο σχηματισμό PEO-like υμενίων για την βελτίωση της αντιμικροβιακής δράσης της επιφάνειας. Πιο συγκεκριμένα, μελετήθηκε η επίδραση του ποσοστού οξυγόνου στο μείγμα του αερίου, του χρόνου …

    patras-thes Repository record for Μεταβολή επιφανειακών ιδιοτήτων φυσικών και συνθετικών υφασμάτων με πλάσμα χαμηλής και ατμοσφαιρικής πίεσης (opens in a new tab)

  8. Radiation Transport in Low Pressure Plasmas: Lighting and Semiconductor Etching Plasmas

    … that do not lead to strongly bound films (like C2F6 plasmas), defluorination is no longer the dominant SiO2 etch process. Finally, we combined the models above to address radiation transport in fluorocarbon/Ar etching plasmas. We found that resonance radiation from Ar produced only small …

    uiuc Repository record for Radiation Transport in Low Pressure Plasmas: Lighting and Semiconductor Etching Plasmas (opens in a new tab)

  9. Long term trends of halogenated trace gases, hydrocarbons, alkyl nitrates and of the oxidative capacity of the atmosphere

    … have also decreased since the 1990s; those of C2F6 appear to be increasing though this disagrees with recent work of other groups. However the growth rate of the radiative forcing of the atmosphere from the PFCs reported herein has been relatively constant for the past decade largely because of …

    east-anglia Repository record for Long term trends of halogenated trace gases, hydrocarbons, alkyl nitrates and of the oxidative capacity of the atmosphere (opens in a new tab)

  10. Understanding the molecular-level chemistry of H2O plasmas and the effects of surface modification and deposition on a selection of oxide substrates

    … with all plasma systems studied (CF4, C2F6, C3F8), the zeolite structure was not damaged by the plasma, and the potential for altering the entire surface area of these porous materials exists. The final portion of this dissertation addresses aspects of work designed to understand the …

    colostate Repository record for Understanding the molecular-level chemistry of H2O plasmas and the effects of surface modification and deposition on a selection of oxide substrates (opens in a new tab)