Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 3 of 3 for “"Bottom-up fill"”.
-
MPSA Effects on Copper Electrodeposition: Understanding Molecular Behavior at the Electrochemical Interface
… acid (MPSA), sodium, chloride, bisulfate and cuprous ions. In connection with these I develop the electrode charge dynamics (ECD) routine to treat the charge mobility in a metal. ECD bridges the gap between small-scale metal-cluster <em>ab initio</em> calculations and large-scale simulations of …
-
Coating and filling of nanometer-scale structures using chemical vapor deposition
Void-free filling of high aspect ratio (AR = 3 to 10) structures, such as trenches or vias, is necessary in nanoscale device fabrication. Examples include shallow trench isolation, metallization, and reverse tone patterning in integrated circuits and optical waveguides in photonic devices. …
-
Spectroelectrochemical investigation of passive layers formed on electrode surfaces
… are used in electrodeposition of Cu to promote bottom up fill of features created on Si chips to connect devices. They work by passivating the surface thus promoting deposition within features rather outside. In the best case, leveler concentration is used to tune the plating potential. Previous …