Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 19 of 19 for “"Bottom electrode"”.
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A study of surface roughness issues in magnetic tunnel junctions
… the surface roughness of the Ni80Fe20 bottom electrode is controlled by applying an rf substrate bias during the deposition. Magnetic tunnel junction elements are fabricated by using shadow mask technique. Experimental results show that the barrier properties and the performance of the …
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Development of Strontium Titanate Based Nanomaterials for Resistive Switching Applications
… graphene oxide layer between SrTiO3 and the bottom electrode, a transition from digital switching to analog switching is demonstrated. Typical potentiation and depression behaviours are implemented towards neuromorphic computing applications. (3) To explore the potential applications of …
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Microstructure and Electrical Properties of Mocvd-Derived Perovskite Lead Zirconium(x) Titanium(1-X) Oxygen(3) and Lead (Scandium Tantalum)(1-X) Titanium(x) Oxygen(3) Thin Films on Lanthanum Nickel Oxide Electrode-Buffered Silicon
… including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation …
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IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
… DEPOSITION (ALD), SYSTEMATIC INVESTIGATIONS ON BOTTOM ELECTRODES AND SWITCHING CHARACTERISTICS OF HFO2 WERE CARRIED OUT TO IDENTIFY THE BEST BOTTOM ELECTRODE MATERIAL TO GIVE A LARGE MEMORY WINDOW AND LOW VARIATION IN READ-WRITE CHARACTERISTICS. PROGRAMMING OR R
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Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper
… (LCI) MIM. The LCI MIM uses copper as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages …
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Growth of spinel oxide thin films for high efficiency room temperature spin filtering
… and superconducting LiTi2O4 as non-magnetic electrode in an almost defect-free CoFe2O4-based spin-filter tunnel junction has been explored. For this purpose, high-quality spinel LiTi2O4 and CoFe2O4 thin films have been deposited by pulsed laser deposition on MgAl2O4 substrates. Both films …
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Effects Of Deposition Temperature And Post Deposition Annealing On The Electrical Properties Of Barium Strontium Titanate Thin Film For Embedded Capacitor Applications
… work, tantalum thin film was used as top and bottom electrode to fabricate the capacitors. BST thin film capacitors were fabricated and characterized for leakage current and dielectric breakdown. Roughness study on pre and post annealed BST films were done using optical profilometer. The …
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An investigation of high-k materials in metal-insulator-metal capacitor structures
… in MIM capacitors with sputtered aluminium electrodes. A conduction mechanism study was performed and an investigation of the dielectric reliability was carried out using the time dependent dielectric breakdown methodology. The material was determined to have excellent reliability …
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Dielectric and Ferroelectric Properties of Lead Lanthanum Zirconate Titanate Thin Films for Capacitive Energy Storage
… in a range of thickness with different bottom electrodes, e.g. Platinum (Pt) and LaNiO<sub>3</sub> (LNO). The final fabricated PLZT film capacitors will show strong potential for the energy storage application. The method adopted is the acetic acid assisted sol-gel deposition for the …
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Biasing Plasmonic Nanocavities
… around functional molecular junctions where two electrodes are bridged by just a few molecules. How molecules exactly behave in a real junction however is still not well understood, since interactions with the electrode materials and neighbouring molecules at the nanoscale is difficult to model …
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Design, fabrication and testing of a lateral self-cleaning MEMS switch
… the device consists of several steps including bottom electrode lift-off, plating mold formation, electroplating, mold removal, switch structure formation and device release. The major issue is the fabrication of the vertical sidewall of gold for electrical contact. A fine control of …
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Magnetic bead-based DNA extraction and purification microfluidic chip
… DNA-attached magnetic beads are attracted to the bottom of the chamber by activating the bottom electrode. DNA molecules are extracted from the magnetic beads by washing and re-suspension processes. The numerical simulation approach has been adopted in order to design the magnetic field source. …
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Elastocapillarity: adhesion and large deformations of thin sheets
… study how a cantilever beam adheres to a fixed bottom electrode: transitions between free, pinned and clamped states are shown to be discontinuous and to exhibit significant hysteresis. The implications for nanoscale switch design are discussed.
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Single-electron transport and electron-phonon interactions in graphene heterostructured self-assembled molecular solid-state devices
… of a heterostructure composed of Au as the bottom electrode, SAM and/or NCs as the middle layer, and single-layer graphene as the top electrode. The first project focuses on single-electron phenomena in finger-design and microwell devices, such as the Coulomb staircase, accompanied by three …
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CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY
… as a switching layer sandwiched between Cu bottom electrode and Ag top electrode. The width of the electrodes is 10 µm and the crossbar array space is 60 µm. This research elaborates how a resistive switching memory cell in a crossbar array degrades its performance under various biasing …
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Growth and Characterization of Epitaxial Oxide Thin Films
… on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.
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Electrocaloric materials and devices
… NdGaO3 (001) substrates with a La0.67Sr0.33MnO3 bottom electrode. The indirect method gives |∆S| ∼ 8 J K−1 kg−1 and |∆T | ∼ 3.5 K near 180 K with |∆E| = 780 kV cm−1. Finite element modelling (FEM) was used to optimise the geometry of multilayered capacitors (MLCs) for EC cooling. Intrinsic …
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The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices
… However, since platinum (Pt) acting as the inert electrode is not economical efficient for industrial production, a compatible replacement of Pt is highly desirable. The device property of Co based resistive switching devices has been explored in this work. Compared with Pt devices, electric …
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Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array
… However, since platinum (Pt) acting as the inert electrode is not an economic choice for industrial production, a Back End of Line (BEOL)-compatible replacement of Pt is highly desirable. A systematic investigation has been conducted and metals such as Ru, Rh and Ir are found to be the best …