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Showing 1 to 2 of 2 for “"Boron and phosphorous"”.
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Boron and phosphorous implantation into (100) germanium : modeling and investigation of dopant annealing behavior
… for future silicon compatible optoelectronic and complementary metal oxide semiconductor (CMOS) device application. Germanium implantation will be a critical process for future device fabrication. However, critical properties like Pearson parameters and dopant activation temperatures are not …
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Selective Borylations of Carbon-Carbon pi-Bonds
Organoboron compounds are viewed as a crucial intermediate for a wide variety of reactions. The most notorious reaction that exemplifies the capability of organoboron reagents is the Suzuki-Miyaura cross-coupling reaction, which is used to generate carbon-carbon bonds under mild conditions. Because …