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Showing 1 to 2 of 2 for “"Borgruppennitride"”.
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MOVPE growth and characterization of Al Kappa Ga 1 - Kappa N/GaN heterostructures for HEMT application
In this thesis the MOVPE growth of AlN, GaN and AlGaN/GaN heterostructures on sapphire substrates was investigated with respect to HEMT application. The prerequisites for excellent HEMT devices were defined with respect to their structural properties: the HEMT structure should consist of a highly …
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Spin-Bahn-Wechselwirkung in niedrigdimensionalen Al x Ga 1-x N/GaN-Elektronengasen
Spin-based electronics or magnetoelectronics (short spintronics) intends to use and control the electron spin in semiconductors for switching purpose. The two possible orientations of the electron spin respective to a defined direction in space make the spin to be an ideal bit for information …