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Showing 1 to 2 of 2 for “"Border traps"”.
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… voltage. In this thesis, investigation into border traps (or charge trapping) and interface states, both of which can induce device instability, in HfO2/InGaAs and Al2O3/InGaAs metal-oxidesemiconductor (MOS) structures was carried out with an emphasis on the characterization of border traps …
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Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs
… pumping approach was proposed to (1) study the traps located at energy levels aligned with the In0.53Ga0.47As conduction band and (2) separate the trapped charge and mobile charge contributions. The analysis revealed an effective mobility (μeff) peaking at ~2850cm2/V.s for an inversion-charge …