Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 18 of 18 for “"Body diode"”.
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Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors
… only draw back with this new device is that the body diode power loss has increased significantly. There are two principal goals of this research. The first is to reduce the body diode reverse recovery characteristics of a 30V LDMOS transistor without employing an additional Schottky diode, …
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Third Quadrant Operation of 1.2-10 kV SiC Power MOSFETs
… conduction, namely the MOS channel path and the body diode path. It is well known that, for 1.2 kV silicon carbide (SiC) planar MOSFETs, the conduction loss in the 3rd-quad is reduced by turning on the MOS channel with a positive gate bias (VGS) and keeping the dead time as small as possible. …
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Design of a step-down DC-DC controller integrated circuit with adaptive dead-time control
… switch is controlled to turn on exactly when the body diode starts to conduct current. The conduction loss through MOSFET switch body diode is minimized. In spice simulation, this scheme increases the overall efficiency in low-voltage applications by up to 3%.
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Selection of Primary Side Devices for LLC Resonant Converters
… recovery problems with the primary switch's body diode. Before selecting CoolMOS devices for use in a LLC resonant converter, it is necessary to investigate its performance in this application. Field failures of PWM soft switching phase shift full bridge converters have been attributed to …
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Supercapacitor-based linear converter for voltage regulator modules
… failed due to the presence of a parasitic body-diode in standard LDOs. The body-diode forms an unwanted discharge path to ground for the supercapacitor. In order to block this path, an application specific LDO that operates in the third quadrant of a MOSFET current-vs-voltage transfer …
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CCM Totem Pole Bridgeless PFC with Ultra Fast IGBT
The totem pole PFC suffers from the Mosfet body diode reverse recovery issue which limits this topology adopted in the CCM high power condition. As the ultra-fast IGBT which is capable of providing 100 kHz switching frequency is available in the market, it is possible to apply the totem pole PFC in …
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High Frequency, High Current Density Voltage Regulators
… can save driving loss and synchronous rectifier body diode conduction loss. Additionally, compared to the existing level-shifted self-driven scheme for bridge-type symmetrical topologies, its gate signal ringing is small and suitable for high-frequency applications. Although the CCB self-driven …
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Intentional and Unintentional Light Emission Diode in Power Electronics applications
… worth remembering the use of the light-emitting diode (LED) as a source of light in lighting system applications. In this perspective, LEDs technology has been widely studied as an “Intentional” source of light in Power Electronics. In such a context, a LED light bulb can be assumed as a …
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Compact Isolated High Frequency DC/DC Converters Using Self-Driven Synchronous Rectification
… In particular, the switching, gate drive and body diode related losses proportionally increase with the switching frequency. This thesis introduces a loss saving self-driven method to drive the secondary side synchronous rectifiers. The loss saving self-driven method introduces two additional …
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High-Frequency and High-Performance VRM Design for the Next Generations of Processors
… which can eliminate all the switching and body-diode losses. The experimental results at 1-2MHz switching frequencies prove that the proposed solutions for the VRM design can realize very high efficiency and high power density.
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Characterization and Failure Mode Analysis of Cascode GaN HEMT
… GaN HEMT has high turn-on loss due to the body diode reverse recovery of the low voltage Si MOSFET and the common source inductance (CSI) of the package; while the turn-off loss is extremely small attributing to the cascode structure. With this unique feature, the critical conduction mode …
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State-Trajectory Analysis and Control of LLC Resonant Converters
… to source voltage and detecting the paralleled body diode conduction, the SR gate driving signal can be tuned within all operating frequency regions. In conclusion, this work not only solves some major academic problems about analysis and control of the LLC resonant converter based on the …
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High Efficiency Optimization of LLC Resonant Converter for Wide Load Range
… the efficiency of LLC resonant converter with diode rectifier still cannot meet the recent efficiency target from industry. In order to further improve efficiency of LLC resonant converters, synchronous rectification must be used. The complete solution of synchronous rectification of LLC …
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High-Efficiency Low-Voltage High-Current Power Stage Design Considerations for Fuel Cell Power Conditioning Systems
… equivalent series resistance (ESR) losses, and body diode related losses. Many of the losses can be avoided by carefully designing the system. Therefore, in order to optimize efficiency, the designer should be aware of which components contribute significant amounts of loss. Loss analysis may be …
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Zero Voltage Switching (ZVS) Turn-on Triangular Current Mode (TCM) Control for AC/DC and DC/AC Converters
… current such that the anti-parallel body diode starts conducting before the device is turned on. CRM and TCM result in variable switching frequency which leads to asynchronous operation in multi-phase and multi-converter systems. Hence, TCM is modified in this dissertation to achieve …
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High-efficiency Transformerless PV Inverter Circuits
… of these drawbacks: MOSFET failure risk from body diode reverse recovery, increased conduction losses due to more devices, or low magnetics utilization. By splitting the conventional MOSFET based phase leg with an optimized inductor, Chapter 3 proposes a novel MOSFET based phase leg …
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High Frequency, High Efficiency Two-Stage Approach for Future Microprocessors
… proposed methods of reducing switching loss and body diode loss can push the switching frequency up to 4MHz while maintaining good efficiency. Such a high frequency makes the high bandwidth design (650kHz) feasible. Hence, the output capacitance can be significantly reduced to save cost and real …
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
New Insulated Gate Bipolar Transistor (IGBT) designs are reliant on simulation tools, such as Sentaurus technology computer-aided design (TCAD) models, which allow for rapid device development that could not be achieved by manufacturing prototypes due to the cost and time associated with …