Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 24 for “"Bias Temperature Instability"”.
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Negative bias temperature instability (NBTI) experiment
The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal …
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Bias temperature instability (BTI) in GaN MOSFETs
… In particular, the threshold voltage (VT) instability under high voltage and temperature stress, sometimes referred to as bias-temperature instability (BTI), is a serious concern. The physical mechanisms responsible for BTI in GaN MIS-HEMT are not well understood. This is mainly because of …
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FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY
Negative Bias Temperature Instability (NBTI) in silicon based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been recognized as a critical reliability issue for advanced space qualified electronics. The phenomenon manifests itself as a modification of threshold voltage (Vth) …
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Bias Temperature Instability Modelling and Lifetime Prediction on Nano-scale MOSFETs
Bias Temperature Instability (BTI) is one of the most important reliability concerns for Metal Oxide Semiconductor Field Effect Transistors (MOSFET), the basic unit in integrated circuits. As the development MOSFET manufacturing technology, circuit designers need to consider device reliability …
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Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs
… oxynitrides (SiON) increases, the negative bias temperature instability (NBTI) rises and becomes a limiting factor for device lifetime. The NBTI can recover significantly during typical measurement time when using conventional instruments. To suppress this recovery, several fast techniques …
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Statistical modeling and simulation of variability and reliability of CMOS technology
… about new failure mechanisms such as Positive Bias Temperature Instability and Stress Induced Leakage Current. In addition, the relentless downscaling of devices to keep up with Moore's law has significantly increased the time-zero variability caused by Random Dopant Fluctuation, Mean Gate …
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Phase Noise in CMOS Phase-Locked Loop Circuits
… types of PLL designs. Hot carrier and negative bias temperature instability effects are analyzed from simulations and experiments. Phase noise of a CMOS phase-locked loop as a frequency synthesizer circuit is modeled from the superposition of noises from its building blocks: voltage-controlled …
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Selected topics on advanced electron devices and their circuit applications
… devices.I part I, a systematic study of Negative Bias Temperature Instability (NBTI) in p-MOSFETs with ultra-thin SiON gate dielectric is reported. By using the fast pulsed method, a fast Dynamic NBTI (DNBTI) component is distinguished from the conventional slow one for the first time. Evidence …
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Experimental Analysis on Aging of Integrated Circuits
… devices, reliability issues such as negative bias temperature instability (NBTI), hot carrier injection (HCI), time dependent dielectric breakdown (TDDB), and electromigration (EM) are coming up as potential threats to superior performance in the field. All these reliability issues cause …
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VALIDATION OF CIRCUIT TIMING BEHAVIOR IN THE PRESENCE OF DELAY DEFECTS AND NBTI AGING
… Furthermore, reliability issues such as Negative Bias Temperature Instability (NBTI) and Hot carrier injection impact the threshold voltage of a transistor which, in turn, affect path delays. This necessitates selecting critical paths and formulating test methods that consider the above factors. …
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Development of characterization techniques for negative bias temperature instabilities
… leads to higher electrical field and operation temperature and, in turn, accelerates the degradation. One of the most serious reliability issues for the current CMOS technology is the negative bias temperature instability (NETI). This project will focus on investigating the NBTI and the positive …
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DEFECTS AND LIFETIME PREDICTION OF GERMANIUM MOSFETS
… high-k/Si-cap/Ge and high-k/GeO2/Ge. Negative Bias Temperature Instability (NBTI) is still one of the main reliability issues, limiting the device lifetime. In this project, it is found that the conventional lifetime prediction method developed for Si is inapplicable to Ge devicesand defect …
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On variability and reliability of poly-Si thin-film transistors
… in flexible substrate and can have low process temperature. These attributes make poly-Si TFT technology more attractive for new applications, such as flexible displays, biosensors, and smart clothing. However, due to the random nature of grain boundaries (GBs) in poly-Si film and self-heating …
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Development of electrical characterization techniques for lifetime prediction and understanding defects in InGaAs-based III-V transistors
… CMOS device, the main reliability issue is bias temperature instability (BTI), NBTI for pMOS and PBTI for nMOS. Therefore, this thesis will talk about investigating the NBTI/PBTI and III-V device performance and lifetime prediction issues. For the whole ofthe thesis, it can be divided by 4 …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
… this manner, the gate stack under positive gate bias features a back-to-back diode configuration with the reverse biased gate-metal/p-GaN Schottky diode in series with the forward biased p-GaN/AlGaN/GaN p-i-n barrier diode. An undesirable aspect of this configuration is a p-GaN intermediate node …
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Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… and increasing chip power dissipation, operating temperatures for device have also been increasing. Another reliability concern, which is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias, arises when the operation …
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TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
… various degradation mechanisms such as negative bias temperature instability (NBTI) with that of the dielectric breakdown; and (iv) a fast evaluation process to estimate statistical breakdown distribution. In this dissertation a comparative study was conducted to investigate individual breakdown …
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Statistical guarantees of performance for RTL designs
… RTL estimates of aging resulting from negative bias temperature instability (NBTI) effects. We describe how our methodology can be extended to compute bit error rates (BER) that are commonly-used performance metrics for RTL designs of wireless communication systems. For RTL of large multicore …
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Study Of Nanoscale Cmos Device And Circuit Reliability
… reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and negative bias temperature instability (NBTI). They become even more important for the nanoscale CMOS devices, because of the high electrical field due to the small …
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