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Showing 1 to 3 of 3 for “"Bi surfactant"”.
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Bi surfactant mediated growth for fabrication of Si,Ge nanostructures and investigation of Si,Ge intermixing by STM
… deposition of a single monolayer of As, Sb or Bi onto the silicon surface before growth of Ge begins, can overcome the problem. The Ge then grows epitaxially in a two-dimensional mode, while the surfactant (As, Sb or Bi) atoms apparently rise up through the growing Ge layers and segregate on …
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III-V Bismide Optoelectronic Devices
… beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb …
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Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface
… on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were carried out by scanning tunneling microscopy (STM). The formation of Ge nanowire arrays on highly ordered …