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Showing 1 to 3 of 3 for “"BaxSr1-xTiO3"”.
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Graded ferroelectric devices: the dielectric analogues of semiconductor diode junctions
… predicted from theory. Homogeneous thin films of BaxSr1-xTiO3 (x=0.7, 0.8, 0.9, and 1.0) were prepared by metallorganic decomposition (MOD). The relative permittivity, dissipation, polarization, resistivity, and grain size were studied as a function of composition and temperature. Ferroelectric …
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New modalities for strain engineering of lead-free perovskite ferroelectric thin films
… 25-350ºC in compositionally-graded epitaxial BaxSr1-xTiO3 thin films, which is promising for next-generation microwave applications.
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Structure prediction, growth, and characterization of perovskites
… symmetric θ-2θ scans of such films of PbTiO3, BaxSr1−xTiO3, and layered perovskite-relative La2NiO4, in which there occur peaks (reflections) that correspond to neither the film nor the substrate crystal structure, and argue that these peaks are the result of multiple diffraction from both the …