Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 12 of 12 for “"Band-to-band tunneling"”.
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Band-to-band tunneling in silicon diodes and tunnel transistors
… applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to …
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Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
The tunneling field-effect transistor (TFET) is a promising device candidate to overcome the 60 mV/decade subthreshold swing (S) limitation of the conventional metal-oxide-semiconductor field-effect transistor (MOSFET). TFET exploits gate modulated band-to-band tunneling (BTBT) to achieve a steep S …
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Modeling and simulation of nano-scale transistor
Modeling and simulation of nano-scale transistor plays an important role in designing circuits. They serve as the medium of exchanging information between foundries and circuit designers. In the past several decades, the innovations of transistor technology such as FDSOI and FinFET have been the …
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Effect of temperature on tunneling and quantum efficiency in cigs solar cells
Utilizing the two-band approximation and Wentzel-Kramers-B ri l l oui n (WKB) approximation, by including the temperature-dependent effective masses and nonparabolicity effects, an investigation of the temperature dependent band-to-band tunneling process is discussed. In comparison with the …
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Energy-Efficient Switching By Band Modulation And Passive Equalization
… past four decades, the wireline communication bandwidth, the number of packaging pins, and transistor density have grown exponentially. Meanwhile, the power consumption has also grown at the same rate when the conventional scaling rule is applied. The ratio of data throughput rate over system …
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InGaAs Quantum-Well MOSFETs for logic applications
… an n-type channel material for future CMOS due to its superior electron transport properties. Great progress has taken place recently in demonstrating InGaAs MOSFETs for this goal. Among possible InGaAs MOSFET architectures, the recessed-gate design is an attractive option due to its scalability …
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… (Si)-based complimentary metal-oxide-semiconductor (CMOS) technology has resulted in an exponential increase in computing power. Stemming from increases in device density and substantial progress in materials science and transistor design, the integrated circuit has seen continual performance …
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Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
… (Si)-based complimentary metal-oxide-semiconductor (CMOS) technology has led to a rapid increase in compute power. Resulting from increases in device densities and advances in materials and transistor design, integrated circuit (IC) performance has continued to improve while operational power …
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Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic
… by halving the areal footprint of the transistor every two years and increasing the performance of making integrated circuits while reducing their cost. The ability to reduce the footprint of the device was enabled by advances in processing technology, novel materials and device design. As …
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Behavioral Modeling of CMOS SPADs Based on TCAD Simulations
SPAD stands for Single Photon Avalanche Detectors. SPADs are photodiodes structurally similar to those used in conventional image sensors. However, while the conventional ones are biased in the low voltage zone within the inverse region, where there is no gain, the SPADs are biased in the avalanche …
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Fundamental limits of the switching abruptness of tunneling transistors
The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling …
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Energy relaxation and thermal rectification in carbon devices
… from battery-limited portable devices to cooling in massive data centers. The most often cited technological roadblock of nanoscale electronics is the \textquotedblleft{}power problem\textquotedblright{} i.e. power densities and device temperatures reaching levels that will prevent …