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Showing 1 to 11 of 11 for “"Band-engineering"”.

  1. Band Engineering of Advanced Materials for Semiconductor Devices

    … functional accurately reproduce the experimental band gap values, whereas GGA is more effective in describing the optical properties. The advanced sX method and the more efficient GGA + U scheme are applied to several important oxides (ZnO, CdO, SrO, and MgO) to address the underestimated band

    cambridge Repository record for Band Engineering of Advanced Materials for Semiconductor Devices (opens in a new tab)

  2. Improved catalysts with properties controlled by semiconductor band engineering

    Difficulties in achieving control over carrier concentration have impeded progress toward tailoring the carrier concentration in semiconducting oxide supports for metal catalysts. Such tailoring could make possible the intentional exploitation of the Schwab effect, in which the carrier …

    uiuc Repository record for Improved catalysts with properties controlled by semiconductor band engineering (opens in a new tab)

  3. Band engineering of metal oxide heterostructures for catalysis applications

    … a heterostructure. Most metal oxides are (wide band-gap) semiconductors and hence a semiconductor heterojunction is formed when one oxide is deposited on another. This conception of supported oxide catalysts allows for the use of heterojunction physics to predict the electron richness at the …

    uiuc Repository record for Band engineering of metal oxide heterostructures for catalysis applications (opens in a new tab)

  4. Electronic band engineering: Titanium dioxide particulate layers for photocatalysis

    Titanium dioxide (TiO2) is a wide bandgap semiconductor with many application advantages for photocatalysis. However, in the porous films that typify applications, photogenerated charge carriers typically drive reactions inefficiently due to fast recombination. To mitigate this problem, this work …

    uiuc Repository record for Electronic band engineering: Titanium dioxide particulate layers for photocatalysis (opens in a new tab)

  5. Crystal growth and band engineering of transition metal chalcogenide systems

    Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms

    uiuc Repository record for Crystal growth and band engineering of transition metal chalcogenide systems (opens in a new tab)

  6. First-principles investigations of transition metal hyperdoped silicon and germanium for intermediate band engineering

    … optoelectronic devices silicon is limited by its band gap of 1.12 eV (_ = 1,110 nm) which precludes absorption of low energy infrared photons. For example, current photovoltaic devices suffer energy loss to a great extent due to non-absorption of a large portion of the incoming solar spectrum. …

    uiuc Repository record for First-principles investigations of transition metal hyperdoped silicon and germanium for intermediate band engineering (opens in a new tab)

  7. IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale

    … light extraction. Material quality and effective band engineering of such III-nitride nanowires are crucial for the design and fabrication of their optoelectronic applications such as LEDs, lasers and photodetectors. In this thesis, we first demonstrate effective control over GaN nanowire size, …

    mit Repository record for IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale (opens in a new tab)

  8. Design of band-engineered photocatalysts using TiO2

    … photocatalysts based on principles of electronic band-engineering drawn from classical microelectroncis. The present work demonstrates such principles using the model case of methylene blue photooxidation over thin-film anatase TiO2 grown by atomic layer deposition. The near-surface electric field …

    uiuc Repository record for Design of band-engineered photocatalysts using TiO2 (opens in a new tab)

  9. Floating gate engineering for novel nonvolatile flash memories

    … density. Finally, charge trapping layer band engineering is proposed for SONOS-type memory for better memory performance. By manipulating the pulse ratio of Hf and Al precursor during ALD deposition, the band diagram of Hf[subscript x]Al[subscript y]O charge trapping layer is optimized to …

    texas Repository record for Floating gate engineering for novel nonvolatile flash memories (opens in a new tab)

  10. Phase Transitions in driven 1D and Quasi-Periodic 2D Optical Lattices

    … present our use of sinusoidal shaking to perform band engineering in a quasi-1D lattice. I will detail our experimental observation of a discontinuous version of the Mott insulator to superfluid transition. This is the first quantum simulation of a discontinuous quantum phase transition in a …

    cambridge Repository record for Phase Transitions in driven 1D and Quasi-Periodic 2D Optical Lattices (opens in a new tab)

  11. Materials Physics for Thermoelectric and Related Energetic Applications

    … of carriers, the shape of the electronic band structure and the density of states, and the magnitude of the band gap. As further research is carried out, it is found that these strategies do not always work to enhance ZT. Even for a working materials system, the improvement margin of …

    mit Repository record for Materials Physics for Thermoelectric and Related Energetic Applications (opens in a new tab)