Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 25 for “"BJT"”.
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Development of BJT radiation sensors and read-out systems for Radon detection
In this thesis we present a novel BJT (Bipolar Junction Transistor) detector that was developed and optimized for alpha particle and radon detection and monitoring. Using functional tests, we have shown that BJT detector operated with floating base can efficiently be used for the purpose of …
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Compact modeling of neutron damage effects in a bipolar junction transistor
… applications. Bipolar junction transistors (BJTs), in particular, are susceptible to neutron radiation. Neutron radiation affects BJT performance primarily by creating lattice defects, which can dramatically increase carrier recombination rate. In turn, the increase in recombination rate …
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Driver Based Soft Switch for Pulse-Width-Modulated Power Converters
… for current driven bipolar junction transistor (BJT). A new insulated-gate-bipolar-transistor (IGBT) and power metal-oxide-semiconductor field-effect-transistor (MOSFET) gated transistor (IMGT) base drive structure was initially proposed for a high power SiC BJT. The proposed base drive method …
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High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors
… semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General …
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Binder-Powder Interaction: Investigating the Process-Property Relations in Metal Binder Jetting
Binder jetting (BJT) is a powder bed based additive manufacturing (AM) process where the interaction of inkjetted droplets of a binder and particles in the powder bed create 3D geometries in a layerwise fashion. The fabricated green parts are usually thermally post-processed for densification and …
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S-parameter modeling of two-port devices using a single, memoryless nonlinearity
… function. A bipolar junction transistor (BJT) operating in the active region is suggested as one application of this modeling approach. The validity of the model is demonstrated by the comparison of measured and model-predicted data for a microwave BJT. The proposed nonlinear model is …
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Device Shot Noise and Saturation Effects on Oscillator Phase Noise
… a non-saturating bipolar junction transistor (BJT) Colpitts oscillator will be extended to the case of a saturating BJT Colpitts oscillator. This new method gives insight into the design of low-noise oscillators, and provides guidelines for design of low-noise oscillators. Example oscillators …
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Binder Infill Pattern Design Strategies for Increased Mechanical Properties in Binder Jet Additive Manufacturing Parts
… and providing green part strength in binder jet (BJT) additive manufacturing (AM). Traditionally, binder is homogeneously deposited throughout the entire part cross-section during printing in order to give sufficient green part strength for post-processing and to preserve part geometric accuracy. …
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Ανάπτυξη νέων δομών φίλτρων στο λογαριθμικό πεδίο με χρήση της κυματικής μεθόδου
… I/V χαρακτηριστικής των ενεργών στοιχείων (BJT τρανζίστορ, MOSFET τρανζίστορ σε ασθενή αναστροφή) για να επιτευχθεί γραμμική συμπεριφορά από είσοδο σε έξοδο. Επιπρόσθετα τα log-domain φίλτρα, προσφέρουν και άλλα πλεονεκτήματα, όπως την ηλεκτρονική ρύθμιση της συχνότητας αποκοπής, την …
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Modeling, Simulation and Design of EOS/ESD Protection Devices and Circuits in Silicon-on-Insulator Technology
… discussed. The implementation of the parasitic BJT in the SOI MOSFET model is different from previously published models. Device simulation examples and an SOI-ESD protection circuit simulation example are also presented.
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Radio frequency power amplifiers for portable communication systems
… concise format. The Bipolar Junction Transistor (BJT) and Metal-Semiconductor Field Effect Transistor (MESFET) are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes (class CE and class F) meet the system requirements of an 850 MHz operating frequency, a power …
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Optical photoreceptors for CMOS neural circuitry.
… The photoreceptor consists of a vertical BJT whose output current is fed to four diode connected MOSFETs. Results of the experiments used to characterize the device both optically and electronically are given. Shortcomings of the device are identified and a modified photoreceptive device …
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A low dispersion 2-GHz comparator
… electronics (PE), bipolar junction transistors (BJT), complementary metal oxide semiconductor field effect transistor (MOSFET).
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Amplifier Architectures for Wireless Communication Systems
… designs with Bipolar Junction Transistor (BJT) are studied to achieve better performing LNAs for receivers. The aim is to obtain a low noise figure while optimizing the bandwidth and achieving a maximum available gain. There are two designs that are operating at different center frequencies …
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Analysis and Design of Wide Tuning Range Low Phase Noise mm-wave LC-VCOs
… in SiGe BiCMOS technology, combining NMOS and BJT cross-coupled pairs to reduce the sizes of transistors and current consumption is proposed and analyzed. The tuning range is improved by adopting small MOS transistors while the reduced BJT current lowers phase noise. To verify the results, a …
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Pulse-based ultra-wideband transmitters for digital communication
… that exploits the exponential properties of a BJT to approximate a Gaussian shape. It generates BPSK modulated pulses at 100Mb/s in one of 14 channels in the 3.1-10.6GHz band, targeting high data rate applications. The transmitter has been fabricated in a 0.18pm SiGe BiCMOS process, and …
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Fundamental building blocks for a compact optoelectronic neural network processor
… a lateral PiN structure and a novel lateral BJT structure. In addition, highly-linear transimpedance amplifiers were designed to condition the signal from the photodetector for further processing.
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A high aspect-ratio silicon substrate-via technology and applications
… Of particular concern is the MOSFET source or BJT emitter impedance, which greatly affects the gain of RF amplifiers. To address this, we have developed a through-wafer via technology for silicon, which allows the implementation of high-aspect ratio, low-impedance ground connections. The …
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Ultra high-speed transmission using dispersion managed solitons
… are defined. A major limitation of these higher bjt rate systems arises from the problem of noise-induced interactions, which is where the.accumulation of timing jitter causes neighbouring dispersion-managed solitons to interact. In addition, the systems become more sensitive to initial …
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A High Temperature Reference Voltage Generator with SiC Transistors
… of high temperature p-type SiC transistors (pnp BJT, PMOS) and OpAmp inconvenience, an all npn voltage reference architecture has been developed based on Widlar bandgap reference concept. The proposed reference voltage generator demonstrates for the first time a functional high temperature …
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