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Showing 1 to 5 of 5 for “"Atomic Layer Etching"”.
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Etching of Silicon, Silicon Nitride, and Atomic Layer Etching of Silicon Dioxide using Inductively Coupled Plasma Beams
Selective, anisotropic etching of silicon nitride (SiN) over Si or SiO2 is vital for fin field-effect transistor (FinFET) fabrication. Anisotropic etching with high selectivity of SiN over Si, and moderate selectivity over SiO2, can be achieved by ion-assisted etching using hydrofluorocarbon gases, …
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Electric field engineering in GaN high electron mobility transistors
… devices, an accurate, reliable and low damage etching technology is needed. However none of the traditional GaN dry etching technologies meets these requirements. This lack of suitable technology has motivated us to develop a new atomic layer etching technique of AlGaN/GaN structures. This …
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Surface chemistry research of electronic processes and electronic devices
… are investigated. In the first topic, atomic layer etching (ALE) of transition metals using Cl2 and acetylacetone (acac) was studied. Etching of transition metals is one of the major challenges in MRAM fabrication. The etching performance on different metals, including etching rates, …
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Co-reactant interactions with CVD surfaces: Activation or passivation of growth
… hard coatings, as well as a new route to achieve atomic layer etching of metals. The conformal deposition of highly conductive or superconductive transition metal nitride thin films is technologically important for a wide range of applications. For early transition metal nitrides, reaction of …
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Etching for quantum-ready surfaces
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2024-03-01 without embargo terms