Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 5 of 5 for “"Antisite Defect"”.
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Optoelektroniniai terahercinio dažnių diapazono komponentai iš puslaidininkių su giliais centrais /
… layers possess optimum combination of arsenic defect concentration and electron mobility. It was determined, that epitaxial layers annealed at 420 °C are preferred for production of THz components: emitters, detectors and mixers, activated with 1 μm radiation. In the second part of this work, …
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Terahertz optoelectronics components of semiconductor materials with deep defects /
… layers possess optimum combination of arsenic defect concentration and electron mobility. It was determined, that epitaxial layers annealed at 420 °C are preferred for production of THz components: emitters, detectors and mixers, activated with 1 μm radiation. In the second part of this work, …
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Multiscale chemistry and design principles of stable cathode materials for Na-ion and Li-ion batteries
… that a cathode material with smaller cationic antisite defect formation energy than another is more resilient under extreme environments.
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Solution-Processed Thin Film Deposition and Characterization of Multinary Chalcogenides: Towards Highly Efficient Cu2BaSn(S,Se)4 Solar Devices
… However, the significant degree of detrimental defect formation associated with near identical coordination and atomic size for all the Cu/Zn/Sn cations involved in the structure prevent the PCE values for these materials from reaching the level comparable to already commercialized thin-film …