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Showing 1 to 20 of 56 for “"Antimonide"”.
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Some transport properties of the indium antimonide/nickel antimonide eutectic system
The eutectic InSb-NiSb system was found by Wilhelm and Weiss to containundirectionally orientated inclusion rods of NiSb in a matrix of InSb .The Hall coefficient , electrical conductivity and magnetoresistance havebeen investigated from 77°K to 6500K, while thermo-electric power and …
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Magnetic hyperfine fields in solid solutions of manganese antimonide and chromium antimonide
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-11T20:10:38Z No. of bitstreams: 1 1971_vernes.pdf: 3389880 bytes, checksum: 4ebbdb5cfb22f887c15576f8ac2fdbf5 (MD5)
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Thermoelectric power of indium antimonide.
Thesis: M.S., Massachusetts Institute of Technology, Department of Metallurgy and Materials Science, 1972
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Antimonide-based III-V multigate transistors
… etching technique of heterostructures containing antimonide-based compounds has been developed. Etched fins and vertical nanowires show smooth, vertical sidewalls, high aspect ratio, and compatibility with the InGaAs system.
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Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices
Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ films and GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ across its entire …
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Antimonide-based type-II superlattices for infrared detection
The vast array of applications for the detection of mid- to long-wave infrared radiation has spurred continuous interest in new and novel technologies to replace the current generation of state-of-the-art devices such as mercury cadmium telluride (MCT) detectors. One of the more promising …
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Thermoelectric properties in gallium telluride-gallium antimonide vacancy compounds
Thermoelectric materials with high figure of merit, which requires large Seebeck coefficient, large electrical conductivity and low thermal conductivity, are of great importance in solid state cooling and power generation. Solid solution formation is one effective method to achieve low thermal …
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Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Die Arbeit beschäftigt sich mit Halbleiter-Diodenlasern im Wellenlängenbereich zwischen 1.8µm und 2.4µm, die mit Hilfe der Molekularstrahlepitaxie in dem bisher wenig untersuchten (AlGaIn)(AsSb)-Materialsystem realisiert wurden. Durch die Untersuchung der elektrischen, optischen und thermischen …
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An evaluation of indium antimonide quantum well transistor technology
… by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its partner, QinetiQ, Ltd, announced 85nm gate length enhancement and depletion mode InSb …
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Investigations of avalanche multiplication and current oscillations in indium antimonide
Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering, 1960
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Defect characterization of antimonide-based type-II superlattices for infrared detection
Type II superlattices (T2SLs) have undergone a significant amount of development and progress since their initial proposed use for the detection of mid- to long-wavelength infrared (MWIR, LWIR) radiation. The type-II broken band gap alignment of these heterostructures allows electrons and holes to …
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Crystal Growth and Electrical Properties of Sputtered Indium Gallium-Antimonide Thin Films
Made available in DSpace on 2014-12-14T16:00:39Z (GMT). No. of bitstreams: 1 7913445.pdf: 6050541 bytes, checksum: 01991b6d7235ee1d83a9efbedbcffe5d (MD5) Previous issue date: 1978
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Crystal Growth and Phase Stability of Metastable Indium Antimonide Bismide Thin Films
Made available in DSpace on 2014-12-14T16:00:41Z (GMT). No. of bitstreams: 1 8004315.pdf: 3022748 bytes, checksum: f6995803f1094ae3655edd827f8a6d7b (MD5) Previous issue date: 1979
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Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide
Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by …
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Electrochemically prepared metal antimonide nanostructures for lithium ion and sodium ion battery anodes
… review of the literature on antimony and metal antimonide alloys for battery anodes is provided. The third chapter details a study on copper antimonide thin films with varying stoichiometry produced through a facile electrodeposition process. In the fourth chapter, stoichiometric Cu2Sb thin …
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The Properties of Indium Gallium Antimonide Thin Films Deposited by Multitarget Rf Sputtering
Made available in DSpace on 2014-12-14T16:00:40Z (GMT). No. of bitstreams: 1 7913651.pdf: 9875434 bytes, checksum: 2fc1678efef1e2e207007c07fcfd73ff (MD5) Previous issue date: 1978
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Crystal Growth, Phase Transformations, and Electrical Properties of Metastable Gallium Antimonide-Germanium Alloys
Single crystal metastable (GaSb)(,1-x)Ge(,x) alloys have been grown on GaAs substrates with compositions across the GaSb-Ge pseudobinary phase diagram. The alloys transformed to the equilibrium state through a continuous series of metastable states at a rate limited by diffusion. Ion bombardment …
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