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Showing 1 to 4 of 4 for “"Ammonium sulfide"”.

  1. Antimonide-based type-II superlattices for infrared detection

    … results are achieved through the use of an ammonium sulfide soaking solution. In one instance, an almost one order of magnitude reduction of dark current densities is achieved using a neutralized ammonium sulfide solution, indicating that surface passivation is an important and necessary …

    uiuc Repository record for Antimonide-based type-II superlattices for infrared detection (opens in a new tab)

  2. Threshold voltage in pentacene field effect transistors with parylene dielectric

    … increase contact angle by 10-20⁰, neither the ammonium sulfide nor the polystyrene treatment significantly improved pentacene packing or mobility. Modification of the parylene surface using an oxygen plasma introduced traps at the semiconductor-dielectric interface, observable through a variety …

    mit Repository record for Threshold voltage in pentacene field effect transistors with parylene dielectric (opens in a new tab)

  3. Novel etch studies and passivation techniques on InAs/GaSb superlattice based infrared detectors

    … of SU-8 versus chalcogenide passivants (Zinc Sulfide, Ammonium Sulfide and Electro-chemical passivation i.e. deposition of pure sulphur) were carried out on InAs/GaSb SLS LWIR single-pixel detectors. Ammonium sulfide [(NH4)2S] treatment and electrochemical sulfur deposition (ECP) reduced dark …

    unm Repository record for Novel etch studies and passivation techniques on InAs/GaSb superlattice based infrared detectors (opens in a new tab)

  4. Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors

    As silicon based devices in integrated circuits reach the fundamental limits of dimensional scaling there is growing research interest in the use of high electron mobility channel materials, such as indium gallium arsenide (InGaAs), in conjunction with high dielectric constant (high-k) gate oxides, …

    cork Repository record for Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors (opens in a new tab)