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Showing 1 to 5 of 5 for “"Ambipolar devices"”.

  1. Fundamental and Applied Aspects of Electronics Based on Single -Walled Carbon Nanotube Thin Films

    … transistors could be used effectively as memory devices to values that are nearly negligible. Not only p-channel but also and n-channel and ambipolar devices have been achieved by use of simple polymer coating strategies. Complex digital circuits composed of nearly 100 SWNT TFTs have also been …

    uiuc Repository record for Fundamental and Applied Aspects of Electronics Based on Single -Walled Carbon Nanotube Thin Films (opens in a new tab)

  2. Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design

    … a few caveats. Under standard conditions, the devices do not enter saturation. Also. it is shown that CNTFETs are ambipolar devices, with a minimum current at V[sub]ds/2. Despite this distinction from MOSFETs, CNTFETs show impressive voltage transfer characteristics (VTC), even at low voltages. …

    mit Repository record for Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design (opens in a new tab)

  3. 2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures

    … by further confining the carrier gas. Undoped devices, which use an externally applied electric field to form a potential well for carriers, replicating the effect of dopants in a doped device, can have higher carrier mobilities and a lower charge impurity background than doped devices. This …

    cambridge Repository record for 2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures (opens in a new tab)

  4. Synthesis, Characterisation and Device Application of Silicon Nanoparticles produced by Mechanical Attrition

    … threshold. The transistors function as ambipolar devices, where the dominance of either carrier is deteri mined by the sign and swing direction of the gate potential. The best transistors fabricated have a hole mobility of 2:63 10ô5cm2=V s and electron mobility 7:81 10ô7cm2=V s.

    cape-town Repository record for Synthesis, Characterisation and Device Application of Silicon Nanoparticles produced by Mechanical Attrition (opens in a new tab)

  5. Electrical detection of atmospheric pollutants and detergents on silicon

    … nitrogen dioxide (NO2), and silicon surfaces on ambipolar silicon junctionless nanowire transistors (Si-JNTs) (Chapter 2). Experimental work and density functional theory (DFT) modelling demonstrate that NO2 functions as a "pseudo" molecular dopant, influencing key device parameters across p-type …

    cork Repository record for Electrical detection of atmospheric pollutants and detergents on silicon (opens in a new tab)