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Showing 1 to 1 of 1 for “"Ambient on PL in GaN"”.

  1. The Effect of Ambient on Photoluminescence from GaN

    The effect of ambient on photoluminescence (PL) from GaN was studied. We found that the PL intensity in vacuum was nearly four times higher than in air. The PL intensity also increased after etching the sample in Aqua Regia and BOE to remove the native oxide layer. After etching, the PL intensity …

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