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Showing 1 to 5 of 5 for “"Algainas"”.
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Regrowth-free monolithic vertical integration of passive and active waveguides
… processed on an InP platform, and consisted of AlGaInAs alloys. To our knowledge this is the first time a passive waveguide has been vertically integrated above an active waveguide for III-V semiconductors, and the first time two AlGaInAs waveguides have been vertically integrated, using …
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True linearized intensity modulation for photonic analog to digital conversion using an injection-locked mode-locked laser
… Mode-locked lasers are fabricated using a novel AlGaInAs-InP material system. By using the BCB for planarization and minimizing the metal pad size and directly modulating the laser, we have achieved very effective fundamental hybrid mode-locking at the repetition rate of ~ 23 GHz. This laser also …
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Defect engineering of InP and InGaAs for optoelectronic applications
… interdiffusion of InP /InGaAs and InGaAs/ AlGainAs quantum well structures, thereby tuning the emission/ detection -wavelengths. The damage accumulation processes resulting from implantation in InP and InGaAs at different temperatures was found to strongly influence the degree of …
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Defect engineering of InP and InGaAs for optoelectronic applications
… interdiffusion of InP /InGaAs and InGaAs/ AlGainAs quantum well structures, thereby tuning the emission/ detection -wavelengths. The damage accumulation processes resulting from implantation in InP and InGaAs at different temperatures was found to strongly influence the degree of …
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Theory and optimisation of metamorphic photonic devices
Metamorphic growth of semiconductor materials – in which a “virtual” substrate with a desired lattice constant is obtained by growing a lattice-mismatched metamorphic buffer layer (MBL) on a conventional substrate such as InP or GaAs – is beginning to attract increasing interest due to its …