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Showing 1 to 11 of 11 for “"AlSb"”.
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Examining Thin Film AlSb for Room Temperature Gamma Detectors
… due to intrinsic material characteristics. AlSb was chosen because of its desirable properties which include the high atomic number of antimony (Z = 51), relatively large band gap (Eg = 1.6 eV), and theorized high dual carrier mobility. Simulations were performed using MCNP5 to predict …
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Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays
… based growth mode between GaAs and GaSb, and AlSb on Si substrate. Since the formation of an IMF array does not proceed through the critical thickness method, but instead makes use of atomic arrangements on the surface of substrate to spontaneously relieve the high strain energy between the …
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Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
… 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work …
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Unipolar barrier strained layer superlattice infrared photodiodes : physics and barrier engineering
… regimes. The bandstructure of InAs/GaSb/AlSb superlattices has been simulated in this work using empirical pseudopotential method. The simulation results have been used extensively in the later part of this work for designing heterojunction T2SL photodetectors. The interfaces between the …
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A study of InAs based quantum structures for use in optoelectronic devices
… quantum materials (e.g., InAsSb NWs, InAs/AlSb NWs and InAs/GaSb core-shell NWs) have been investigated. The NW samples were grown by molecular beam epitaxy (MBE); self-catalysed droplet epitaxy was used as the growth mechanism for them. To improve the optical properties of InAs NWs, we …
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Novel structures for lattice-mismatched infrared photodetectors
… conditions. For the sample grown on Si, an AlSb nucleation layer was used to reduce the occurrence of twinning defects. In addition to the samples grown on mismatched substrates, an equivalent structure was further grown on a native GaSb substrate, for comparison. X-ray diffraction (XRD) was …
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Highly tunable room temperature quantum cascade lasers
… of >10mW. The main QCL examined was an InAs/AlSb based device which had been carefully designed to maintain efficient electron injection and reduce thermal backfilling at high temperatures. This allowed wavelength emission at ~3.3µm in pulsed mode at room temperature. A system was developed …
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Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy
… on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach …
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Resonant Raman scattering studies of III-V semiconductor microstructures
… materials in two spatial directions. In a GaSh/ AlSb system we show Raman evidence of this ordering via observation of zone folded acoustic modes and compare to -""-··---·-··- AlAs/GaAs results. In other work resonant Raman documents the effects on the dipole-forbidden interface mode of a …
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Investigation of Infrared Detectors Based on the Gallium-free Superlattice
… 1 second As soak, a 1 second Al flash, and a 1ML AlSb layer. A reference sample with no special interface layer was also grown. The results showed that the reference, the As soak, and the AlSb layer all showed comparable performance, whereas the Al flash and growth interrupt reduced the quality of …
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Mid-infrared antimonide based type II quantum dot lasers for use in gas sensing
… on 0.5 μm thick InAs buffer layers using either AlSb or GaSb interlayers with IMF technique. Even though the dislocation densities are still high in all the 3 samples (~109 cm-2), they all achieved comparable PL intensity as the QDs grown on InAs substrates. Electro-luminescence (EL) from the QDs …